Simulation of Electron and Phonon Dynamics in Terahertz Semiconductor Devices within the Framework of a Microscopic Density Matrix Approach
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Optics Express
We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.
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Proposed for publication in IEEE Selected Topics in Quantum Electronics.
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Proposed for publication in Journal for Modern Optics.
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Proposed for publication in Optics Express.
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Optics Express
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