Publications

Results 76–100 of 140
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Search for Majorana fermions in topological superconductors

Pan, Wei P.; Shi, Xiaoyan S.; Hawkins, Samuel D.; Klem, John F.

The goal of this project is to search for Majorana fermions (a new quantum particle) in a topological superconductor (a new quantum matter achieved in a topological insulator proximitized by an s-wave superconductor). Majorana fermions (MFs) are electron-like particles that are their own anti-particles. MFs are shown to obey non-Abelian statistics and, thus, can be harnessed to make a fault-resistant topological quantum computer. With the arrival of topological insulators, novel schemes to create MFs have been proposed in hybrid systems by combining a topological insulator with a conventional superconductor. In this LDRD project, we will follow the theoretical proposals to search for MFs in one-dimensional (1D) topological superconductors. 1D topological superconductor will be created inside of a quantum point contact (with the metal pinch-off gates made of conventional s-wave superconductors such as niobium) in a two-dimensional topological insulator (such as inverted type-II InAs/GaSb heterostructure).

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In situ biaxial rotation at low-temperatures in high magnetic fields

Review of Scientific Instruments

Selby, N.S.; Crawford, M.; Tracy, Lisa A.; Reno, J.L.; Pan, Wei P.

We report the design, construction, and characterization of a biaxial sample rotation stage for use in a cryogenic system for orientation-dependent studies of anisotropic electronic transport phenomena at low temperatures and high magnetic fields. Our apparatus allows for continuous rotation of a sample about two axes, both independently and simultaneously.

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Miniband transport in a two-dimensional electron gas with a strong periodic unidirectional potential modulation

Solid State Communications

Lyo, S.K.; Pan, Wei P.

We study the Bloch oscillations of a two-dimensional electron gas with a strong periodic potential-modulation and miniband transport along the field at low temperatures, assuming a free motion in the transverse direction. The dependence of the current on the field, the electron density, and the temperature is investigated by using a relaxation-time approximation for inelastic scattering. For a fixed total scattering rate, the field dependence of the current is sensitive to the ratio of the elastic and inelastic scattering rates in contrast with the recent result of a multiband but otherwise similar model with a weak potential modulation. © 2014 Elsevier Ltd.

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Non-abelian fractional quantum hall effect for fault-resistant topological quantum computation

Pan, Wei P.; Shi, Xiaoyan S.; Crawford, Matthew D.; Nielsen, Erik N.; Cederberg, Jeffrey G.

Topological quantum computation (TQC) has emerged as one of the most promising approaches to quantum computation. Under this approach, the topological properties of a non-Abelian quantum system, which are insensitive to local perturbations, are utilized to process and transport quantum information. The encoded information can be protected and rendered immune from nearly all environmental decoherence processes without additional error-correction. It is believed that the low energy excitations of the so-called =5/2 fractional quantum Hall (FQH) state may obey non-Abelian statistics. Our goal is to explore this novel FQH state and to understand and create a scientific foundation of this quantum matter state for the emerging TQC technology. We present in this report the results from a coherent study that focused on obtaining a knowledge base of the physics that underpins TQC. We first present the results of bulk transport properties, including the nature of disorder on the 5/2 state and spin transitions in the second Landau level. We then describe the development and application of edge tunneling techniques to quantify and understand the quasiparticle physics of the 5/2 state.

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Enabling graphene nanoelectronics

Ohta, Taisuke O.; McCarty, Kevin F.; Beechem, Thomas E.; Pan, Wei P.; Biedermann, Laura B.; Ross III, Anthony J.; Gutierrez, Carlos G.

Recent work has shown that graphene, a 2D electronic material amenable to the planar semiconductor fabrication processing, possesses tunable electronic material properties potentially far superior to metals and other standard semiconductors. Despite its phenomenal electronic properties, focused research is still required to develop techniques for depositing and synthesizing graphene over large areas, thereby enabling the reproducible mass-fabrication of graphene-based devices. To address these issues, we combined an array of growth approaches and characterization resources to investigate several innovative and synergistic approaches for the synthesis of high quality graphene films on technologically relevant substrate (SiC and metals). Our work focused on developing the fundamental scientific understanding necessary to generate large-area graphene films that exhibit highly uniform electronic properties and record carrier mobility, as well as developing techniques to transfer graphene onto other substrates.

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Results 76–100 of 140
Results 76–100 of 140