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Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

ACS Applied Materials and Interfaces

Leonard, Francois L.; Yu, Wenlong; Celio, Kimberlee C.; Medlin, Douglas L.; Sugar, Joshua D.; Talin, A.A.; Pan, Wei P.

The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological, electronic, and optical properties. Here, we present spatially resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Because of the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2, at room temperature for visible light illumination, at zero bias. We also show that these devices suffer from significant ambient reactivity, such as the formation of a Te-rich surface region driven by Zr oxidation as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

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TYPE Journal Article YEAR 2017
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Emergent Phenomena in Oxide Nanostructures

Pan, Wei P.; Ihlefed, Jon F.; Lu, Ping L.; Lee, Stephen R.

The field of oxide electronics has seen tremendous growth over two decades and oxide materials find wide-ranging applications in information storage, fuel cells, batteries, and more. Phase transitions, such as magnetic and metal-to-insulator transitions, are one of the most important phenomena in oxide nanostructures. Many novel devices utilizing these phase transitions have been proposed, ranging from ultrafast switches for logic applications to low power memory structures. Yet, despite this promise and many years of research, a complete understanding of phase transitions in oxide nanostructures remains elusive. In this LDRD, we report two important observations of phase transitions. We conducted a systematic study of these transitions. Moreover, emergent quantum phenomena due to the strong correlations and interactions among the charge, orbital, and spin degrees of freedom inherent in transition metal oxides were explored. In addition, a new, fast atomic-scale chemical imaging technique developed through the characterization of these oxides is presented.

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TYPE SAND Report YEAR 2017
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High-cooperativity terahertz landau polaritons in the ultrastrong coupling regime

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Li, Xinwei; Zhang, Qi; Lou, Minhan; Reno, J.L.; Pan, Wei P.; Watson, John D.; Manfra, Michael J.; Kono, Junichiro

We have integrated an ultrahigh mobility twodimensional electron gas with a high-quality-factor terahertz photonic cavity. With a quantizing magnetic field and at low temperatures, we demonstrated collective nonperturbative coupling of the electron cyclotron resonance with terahertz cavity photons with a high cooperativity. Due to the suppression of superradiance-induced broadening of cyclotron resonance by the high-quality-factor cavity, our hybrid quantum system exhibited unprecedentedly sharp polariton lines and a large vacuum Rabi splitting simultaneously.

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TYPE Conference Poster YEAR 2017
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National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells

Pan, Wei P.; Lu, Tzu-Ming L.; Xia, J.S.; Sullivan, N.S.; Huang, S.-H.H.; Chuang, Y.C.; Li, J.-Y.L.; Liu, C.W.; Tsui, D.C.

The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.

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TYPE Other Report YEAR 2016
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Quantum Oscillations at Integer and Fractional Landau Level Indices in Single-Crystalline ZrTe5

Scientific Reports

Yu, W.; Jiang, Y.; Yang, J.; Dun, Z.L.; Zhou, H.D.; Jiang, Z.; Lu, Ping L.; Pan, Wei P.

A three-dimensional (3D) Dirac semimetal (DS) is an analogue of graphene, but with linear energy dispersion in all (three) momentum directions. 3D DSs have been a fertile playground in discovering novel quantum particles, for example Weyl fermions, in solid state systems. Many 3D DSs were theoretically predicted and experimentally confirmed. We report here the results in exfoliated ZrTe 5 thin flakes from the studies of aberration-corrected scanning transmission electron microscopy and low temperature magneto-transport measurements. Several unique results were observed. First, a π Berry phase was obtained from the Landau fan diagram of the Shubnikov-de Haas oscillations in the longitudinal conductivity σxx. Second, the longitudinal resistivity ρxx shows a linear magnetic field dependence in the quantum limit regime. Most surprisingly, quantum oscillations were also observed at fractional Landau level indices N = 5/3 and 7/5, demonstrating strong electron-electron interaction effects in ZrTe5.

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TYPE Journal Article YEAR 2016
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Fast Atomic-Scale Chemical Imaging of Crystalline Materials and Dynamic Phase Transformations

Nano Letters

Lu, Ping; Yuan, Ren L.; Ihlefeld, Jon I.; Spoerke, Erik D.; Pan, Wei P.; Zuo, Jian M.

Atomic-scale phenomena fundamentally influence materials form and function that makes the ability to locally probe and study these processes critical to advancing our understanding and development of materials. Atomic-scale chemical imaging by scanning transmission electron microscopy (STEM) using energy-dispersive X-ray spectroscopy (EDS) is a powerful approach to investigate solid crystal structures. Inefficient X-ray emission and collection, however, require long acquisition times (typically hundreds of seconds), making the technique incompatible with electron-beam sensitive materials and study of dynamic material phenomena. Here we describe an atomic-scale STEM-EDS chemical imaging technique that decreases the acquisition time to as little as one second, a reduction of more than 100 times. We demonstrate this new approach using LaAlO3 single crystal and study dynamic phase transformation in beam-sensitive Li[Li0.2Ni0.2Mn0.6]O2 (LNMO) lithium ion battery cathode material. By capturing a series of time-lapsed chemical maps, we show for the first time clear atomic-scale evidence of preferred Ni-mobility in LNMO transformation, revealing new kinetic mechanisms. These examples highlight the potential of this approach toward temporal, atomic-scale mapping of crystal structure and chemistry for investigating dynamic material phenomena.

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TYPE Journal Article YEAR 2016
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Results 26–50 of 140
Results 26–50 of 140