A TaN Resistor Reliability Evaluation
Abstract not provided.
Publications
Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers
Applied Physics Letters
We examined the spectral responsivity of a 1.77 μm thick type-II superlattice based long-wave infrared detector in combination with metallic nanoantennas. Coupling between the Fabry-Pérot cavity formed by the semiconductor layer and the resonant nanoantennas on its surface enables spectral selectivity, while also increasing peak quantum efficiency to over 50%. Electromagnetic simulations reveal that this high responsivity is a direct result of field-enhancement in the absorber layer, enabling significant absorption in spite of the absorber's subwavelength thickness. Notably, thinning of the absorbing material could ultimately yield lower photodetector noise through a reduction in dark current while improving photocarrier collection efficiency. The temperature- and incident-angle-independent spectral response observed in these devices allows for operation over a wide range of temperatures and optical systems. This detector paradigm demonstrates potential benefits to device performance with applications throughout the infrared.
Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact
Abstract not provided.
An AlN/Al0.85Ga0.15N high electron mobility transistor
Applied Physics Letters
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.
An AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact
Abstract not provided.
Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors
Applied Physics Letters
Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.
MBE and Material Characteristics of T2SL
Abstract not provided.
Wafer-Level Step-Stressing of InGaP/GaAs HBTs
ECS Transactions
Abstract not provided.
Wafer-level step-stressing of InGaP/GaAs HBTs
ECS Transactions
Wafer-level step-stress experiments on high voltage Npn InGaP/GaAs HBTs are presented. A methodology utilizing brief, monotonically increasing stresses and periodic, interrupted parametric characterization is presented. The method and various examples of step-stressed HBTs illustrate the value of the technique for screening the reliability of HBT wafers. Degradation modes observed in these InGaP/GaAs HBTs closely correspond to a subset of those in other, longer types of reliability experiments and can be relevant in a reliability screen. A statistical sampling of HBT wafers reveals a consistently realized critical destructive limit over a very narrow power range, which indicates that thermal stress is the main cause of degradation. When stepped just shy of the destructive limit, electrical characteristics are capable of revealing gradual degradation. The end state of stressing typically involves shorting of both the base-emitter and base-collector junctions. Interrupted characterization revealed cases where baseemitter shorts preceded base-collector shorts and other cases where base-collector shorts occurred first. Examples of degradation include reductions in reverse breakdown voltage, increases in the offset voltage, and drops in current gain. These wafer-level stepstress techniques show promise for reducing the large time lag between wafer fabrication and useful reliability screening in HBTs.
Epitaxially passivated mesa-isolated InGaAs photodetectors
Abstract not provided.
GaSb-based infrared nBn detectors utilizing InAsPSb absorbers
Abstract not provided.
Theory and Performance of InAsSb nBn Focal Plane Arrays
Abstract not provided.
Copy of Thermal Stressing of InGaP/GaAs HBTs
Abstract not provided.
Thermal Stressing of InGaP/GaAs HBTs
Abstract not provided.
Results 26–39 of 39