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Directional perfect absorption using deep subwavelength low-permittivity films

Physical Review B - Condensed Matter and Materials Physics

Luk, Ting S.; Campione, Salvatore; Kim, Iltai; Feng, Simin; Jun, Young C.; Liu, Sheng L.; Wright, Jeremy B.; Brener, Igal B.; Catrysse, Peter B.; Fan, Shanhui; Sinclair, Michael B.

We experimentally demonstrate single beam directional perfect absorption (to within experimental accuracy) of p-polarized light in the near-infrared using unpatterned, deep subwavelength films of indium tin oxide (ITO) on Ag. The experimental perfect absorption occurs slightly above the epsilon-near-zero (ENZ) frequency of ITO, where the permittivity is less than 1 in magnitude. Remarkably, we obtain perfect absorption for films whose thickness is as low as ∼1/50th of the operating free-space wavelength and whose single pass attenuation is only ∼5%. We further derive simple analytical conditions for perfect absorption in the subwavelength-film regime that reveal the constraints that the thin layer permittivity must satisfy if perfect absorption is to be achieved. Then, to get a physical insight on the perfect absorption properties, we analyze the eigenmodes of the layered structure by computing both the real-frequency/complex-wavenumber and the complex-frequency/real-wavenumber modal dispersion diagrams. These analyses allow us to attribute the experimental perfect absorption condition to the crossover between bound and leaky behavior of one eigenmode of the layered structure. Both modal methods show that perfect absorption occurs at a frequency slightly larger than the ENZ frequency, in agreement with experimental results, and both methods predict a second perfect absorption condition at higher frequencies, attributed to another crossover between bound and leaky behavior of the same eigenmode. Our results greatly expand the list of materials that can be considered for use as ultrathin perfect absorbers and provide a methodology for the design of absorbing systems at any desired frequency. © 2014 American Physical Society.

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TYPE Presentation YEAR 2014
ScopusOSTIDOI

Gallium nitride nanowire distributed feedback lasers

Conference on Lasers and Electro-Optics Europe - Technical Digest

Wright, Jeremy B.; Campione, Salvatore; Liu, Sheng L.; Martinez, Julio A.; Xu, Huiwen; Luk, Ting S.; Li, Qiming; Wang, George T.; Swartzentruber, Brian S.; Brener, Igal B.

We have demonstrated single-mode lasing in a single gallium nitride nanowire using distributed feedback by external coupling to a dielectric grating. By adjusting the nanowire grating alignment we achieved a mode suppression ratio of 17dB.

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TYPE Conference YEAR 2014
ScopusOSTI

Single-mode GaN nanowire lasers

Optics Express

Li, Qiming L.; Wright, Jeremy B.; Chow, Weng W.; Luk, Ting S.; Brener, Igal B.; Lester, Luke F.; Wang, George T.

We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.

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TYPE Journal Article YEAR 2012
ScopusOSTIDOI
Results 101–150 of 195
Results 101–150 of 195