Publications

Applied Physics Letters

Bretz-Sullivan, Terence M.; Lewis, Rupert; Lima-Sharma, Ana L.; Lidsky, David A.; Smyth, Christopher M.; Harris, Charles T.; Venuti, Michael V.; Eley, Serena E.; Lu, Tzu-Ming L.

We examine the DC and radio frequency (RF) response of superconducting transmission line resonators comprised of very thin NbTiN films, [Formula: see text] in thickness, in the high-temperature limit, where the photon energy is less than the thermal energy. The resonant frequencies of these superconducting resonators show a significant nonlinear response as a function of RF input power, which can approach a frequency shift of [Formula: see text] in a [Formula: see text] span in the thinnest film. The strong nonlinear response allows these very thin film resonators to serve as high kinetic inductance parametric amplifiers.

Bretz-Sullivan, Terence M.; Brickson, Mitchell I.; Foster, Natalie D.; Hutchins-Delgado, Troy A.; Lewis, Rupert; Lu, Tzu-Ming L.; Miller, Andrew J.; Srinivasa, Vanita S.; Tracy, Lisa A.; Wanke, Michael W.; Luhman, Dwight R.

Hole spin qubits confined to lithographically - defined lateral quantum dots in Ge/SiGe heterostructures show great promise. On reason for this is the intrinsic spin - orbit coupling that allows all - electric control of the qubit. That same feature can be exploited as a coupling mechanism to coherently link spin qubits to a photon field in a superconducting resonator, which could, in principle, be used as a quantum bus to distribute quantum information. The work reported here advances the knowledge and technology required for such a demonstration. We discuss the device fabrication and characterization of different quantum dot designs and the demonstration of single hole occupation in multiple devices. Superconductor resonators fabricated using an outside vendor were found to have adequate performance and a path toward flip-chip integration with quantum devices is discussed. The results of an optical study exploring aspects of using implanted Ga as quantum memory in a Ge system are presented.

Lu, Tzu-Ming L.; Lewis, Rupert; Sharma, Peter A.; Harris, Charles T.; Lima-Sharma, Ana L.; Bretz-Sullivan, Terence M.; Lidsky, David A.; Venuti, Michael V.; Eley, Serena E.

Abstract not provided.