Electron Spin Lifetime of a Single Antimony Donor in Silicon
Applied Physics Letters
Abstract not provided.
Publications
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
Abstract not provided.
A Programmable Bandwidth Aluminum Nitride Microresonator Filter
Abstract not provided.
Tuning the Bandwidth and Center Frequency of Micromechanical Acoustic Filters
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
Electrometer sensitivity for spin readout
Abstract not provided.
Sandia National Laboratories SUMMiT VTM MEMS Process: Mature Technology with an Exciting Future
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Development of few-electron Si quantum dots for use as qubits
Abstract not provided.
Enhancement-mode buried strained-silicon channel quantum dot with tunable lateral geometry
Abstract not provided.
Mexican University Program presentations and videos for the University of Guadalajara
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Mexican University Program presentations for the University of Guadalajara part two
Abstract not provided.
Transport and Charge Sensing for MOS and SiGe Quantum Dot Devices
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Enhancement-mode buried strained-silicon channel double quantum dot
Abstract not provided.
Results 76–100 of 112