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Plasmonic nanoantennas for enhanced midwave and longwave infrared imaging

Proceedings of SPIE - The International Society for Optical Engineering

Peters, D.W.; Davids, Paul S.; Kim, Jin K.; Beechem, Thomas E.; Howell, Stephen W.; Leonhardt, Darin L.; Ohta, Taisuke O.; Wendt, J.R.; Montoya, John A.

Conversion of plane waves to surface waves prior to detection allows key advantages in changes to the architecture of the detector pixels in a focal plane array. We have integrated subwavelength patterned metal nanoantennas with various detector materials to incorporate these advantages: midwave infrared indium gallium arsenide antimonide detectors and longwave infrared graphene detectors. Nanoantennas offer a means to make infrared detectors much thinner by converting incoming plane waves to more tightly bound and concentrated surface waves. Thinner architectures reduce both dark current and crosstalk for improved performance. For graphene detectors, which are only one or two atomic layers thick, such field concentration is a necessity for usable device performance, as single pass plane wave absorption is insufficient. Using III-V detector material, we reduced thickness by over an order of magnitude compared to traditional devices. We will discuss Sandia's motivation for these devices, which go beyond simple improvement in traditional performance metrics. The simulation methodology and design rules will be discussed in detail. We will also offer an overview of the fabrication processes required to make these subwavelength structures on at times complex underlying devices based on III-V detector material or graphene on silicon or silicon carbide. Finally, we will present our latest infrared detector characterization results for both III-V and graphene structures.

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TYPE Conference Poster YEAR 2015
ScopusOSTI

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information]

Nano Letters

Ohta, Taisuke O.; Diaconescu, Cristian B.

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theory that predicts a 1.6 eV barrier for transport from WSe2 to graphene.

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TYPE Journal Article YEAR 2014
OSTIDOI

Direct observation of grain boundary PN junction potentials in cigs using photoemission and low energy electron microscopy (PELEEM)

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Chan, Calvin C.; Ohta, Taisuke O.; Kellogg, Gary L.; Mansfield, Lorelle; Ramanathan, Kannan; Noufi, Rommel

Spectroscopic microscopies with chemical and electronic structure information have become important tools for understanding the complex structure-property-performance relationships of high performing Cu(In1-xGax)Se2 (CIGS) photovoltaic materials and devices. Here, we describe the application of spectrally resolved photoemission and low-energy electron microscopy (spec-PELEEM) to CIGS. With the ability to map relative electric potentials with high fidelity, a large variation in the built-in pn junction potential was observed at CIGS grain boundaries. In any given 20 μm region, the built-in voltage spanned the range from depletion (∼ 0.5 V) to inversion (∼ 1.4 V). These grain-to-grain variations could explain the electron collection efficiency of CIGS grain boundaries and devices. These results highlight the potential of spec-PELEEM to solve critical structure-property-performance issues facing compound thin-film materials.

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TYPE Conference Poster YEAR 2014
ScopusOSTIDOI

Application of plasmonic subwavelength structuring to enhance infrared detection

Proceedings of SPIE - The International Society for Optical Engineering

Peters, David W.; Davids, Paul D.; Kim, Jin K.; Leonhardt, Darin L.; Beechem, Thomas E.; Howell, Stephen W.; Ohta, Taisuke O.; Wendt, J.R.; Montoya, John A.

Nanoantennas are an enabling technology for visible to terahertz components and may be used with a variety of detector materials. We have integrated subwavelength patterned metal nanoantennas with various detector materials for infrared detection: midwave infrared indium gallium arsenide antimonide detectors, longwave infrared graphene detectors, and shortwave infrared germanium detectors. Nanoantennas offer a means to make infrared detectors much thinner, thus lowering the dark current and improving performance. The nanoantenna converts incoming plane waves to more tightly bound and concentrated surface waves. The active material only needs to extend as far as these bound fields. In the case of graphene detectors, which are only one or two atomic layers thick, such field concentration is a necessity for usable device performance, as single pass absorption is insufficient. The nanoantenna is thus the enabling component of these thin devices. However nanoantenna integration and fabrication vary considerably across these platforms as do the considerations taken into account during design. Here we discuss the motivation for these devices and show examples for the three material systems. Characterization results are included for the midwave infrared detector. © 2014 SPIE.

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TYPE Conference YEAR 2014
ScopusOSTI

Accelerating the development of transparent graphene electrodes through basic science driven chemical functionalization

Chan, Calvin C.; Beechem, Thomas E.; Ohta, Taisuke O.; Brumbach, Michael T.

Chemical functionalization is required to adapt graphenes properties to many applications. However, most covalent functionalization schemes are spontaneous or defect driven and are not suitable for applications requiring directed assembly of molecules on graphene substrates. In this work, we demonstrated electrochemically driven covalent bonding of phenyl iodoniums onto epitaxial graphene. The amount of chemisorption was demonstrated by varying the duration of the electrochemical driving potential. Chemical, electronic, and defect states of phenyl-modified graphene were studied by photoemission spectroscopy, spatially resolved Raman spectroscopy, and water contact angle measurement. Covalent attachment rehybridized some of the delocalized graphene sp2 orbitals to localized sp3 states. Control over the relative spontaneity (reaction rate) of covalent graphene functionalization is an important first step to the practical realization of directed molecular assembly on graphene. More than 10 publications, conference presentations, and program highlights were produced (some invited), and follow-on funding was obtained to continue this work.

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TYPE SAND Report YEAR 2013
OSTIDOI
Results 76–100 of 141
Results 76–100 of 141