This paper presents an isolated bidirectional dc/dc converter for battery energy storage applications. Two main features of the proposed circuit topology are high voltage-conversion ratio and reduced battery current ripple. The primary side circuit is a quasi-switched-capacitor circuit with reduced voltage stress on switching devices and a 3:1 voltage step down ratio, which reduces the turns ratio of the transformer to 6:1:1. The secondary side circuit has an interleaved operation by utilizing the split magnetizing inductance of the transformer, which not only helps to increase the step down ratio but also reduces the battery current ripple. Similar to the dual-active-bridge circuit, the phase shift control is implemented to regulate the operation power of the circuit. A 1-kW, 300-kHz, 380-420 V/20-33 V GaN-based circuit prototype is currently under fabrication. The preliminary test results are presented.
The National Nuclear Security Agency (NNSA) initiated the Minority Serving Institution Partnership Plan (MSIPP) to 1) align investments in a university capacity and workforce development with the NNSA mission to develop the needed skills and talent for NNSA’s enduring technical workforce at the laboratories and production plants, and 2) to enhance research and education at under-represented colleges and universities. Out of this effort, MSIPP launched a new consortium in early FY17 focused on Tribal Colleges and Universities (TCUs) known as the Advanced Manufacturing Network Initiative (AMNI). This consortium has been extended for FY20 and FY21. The following report summarizes the status update during this quarter.
Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al0.05Ga0.45In0.5P/Al0.4Ga0.1In0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.
Atcitty, Stanley A.; Tabarez, Jose T.; Pragallapati, Nataraj P.; Lavrova, Olga L.; Ranade, Satish R.; Fleming, Sullivan F.; Derin, Irving D.; De Angelis, Valerio D.