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IEEE Transactions on Electron Devices
Dasgupta, Sandeepan; Sun, Min; Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Stanley, James B.; Atcitty, Stanley A.; Palacios, Tomas
Charge trapping and slow (from 10 s to > 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages (> 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs < V th, V ds = 0). Two different trapping components, i.e., TG1 (E a = 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al 0.15 Ga 0.85N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E a ≈ 1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps. © 2012 IEEE.
Kaplar, Robert K.; Marinella, Matthew J.; DasGupta, Sandeepan D.; Smith, Mark A.; Atcitty, Stanley A.
Biedermann, Laura B.; Kaplar, Robert K.; Marinella, Matthew J.; Zavadil, Kevin R.; Atcitty, Stanley A.
IEEE Transactions on Electron Devices
Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Stanley, James B.; Atcitty, Stanley A.
Kaplar, Robert K.; Marinella, Matthew J.; DasGupta, Sandeepan D.; Smith, Mark A.; Atcitty, Stanley A.
Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Stanley, James B.; Smith, Mark A.; Atcitty, Stanley A.
Kaplar, Robert K.; Marinella, Matthew J.; Atcitty, Stanley A.; Smith, Mark A.
Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Stanley, James B.; Smith, Mark A.; Atcitty, Stanley A.
Atcitty, Stanley A.
Kaplar, Robert K.; Marinella, Matthew J.; Atcitty, Stanley A.; Smith, Mark A.
Materials Science Forum
DasGupta, Sandeepan D.; Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Brock, Reinhard; Smith, Mark A.; Atcitty, Stanley A.
Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ∼20 minutes with monochromatic light (front side illumination) of energy 2.1 eV (intensity ∼5×10 16 cm-2s-1) in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi/Vc-CSi). © (2012) Trans Tech Publications.
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings
Fregosi, Daniel; Bhattacharya, Subhashish; Atcitty, Stanley A.
In this paper, the electrical characteristics of a carbon enhanced valve-regulated lead-acid (VRLA) battery from East Penn Manufacturing are investigated and a dynamic model is developed for use in electrical simulations. The electrochemical processes that cause specific dynamic behaviors have been investigated. These processes are explained and a non-linear electric model, which captures the results of some of these electrochemical dynamics, is presented. The method to determine model parameters using experimental data is shown. To verify the battery model, both a pulsed current profile and an arbitrary current profile were applied to the battery and to the battery model and the voltage responses of the two were compared. © 2011 IEEE.
Atcitty, Stanley A.
Atcitty, Stanley A.
Atcitty, Stanley A.
Kaplar, Robert K.; DasGupta, Sandeepan D.; Marinella, Matthew J.; Smith, Mark A.; Atcitty, Stanley A.
Applied Physics Letters
Dasgupta, Sandeepan; Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Brock, Reinhard; Smith, Mark A.; Atcitty, Stanley A.
Carrier generation characteristics in n-type substrate silicon carbide (SiC) metal oxide semiconductor capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in approximately 20 min with monochromatic front side illumination of energy 2.1 eV in 4H-SiC for electric fields less than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy/carbon vacancy-antisite complex (VSi/Vc-C Si). © 2011 American Institute of Physics.
Atcitty, Stanley A.
Atcitty, Stanley A.
Kaplar, Robert K.; Marinella, Matthew J.; Atcitty, Stanley A.; Smith, Mark A.; DasGupta, Sandeepan D.
Kaplar, Robert K.; DasGupta, Sandeepan D.; Marinella, Matthew J.; Smith, Mark A.; Atcitty, Stanley A.
Ihlefeld, Jon I.; Atcitty, Stanley A.
Atcitty, Stanley A.; DasGupta, Sandeepan D.; Kaplar, Robert K.; Smith, Mark A.
Atcitty, Stanley A.
DasGupta, Sandeepan D.; Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Smith, Mark A.; Atcitty, Stanley A.
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