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Phased-array sources based on nonlinear metamaterial nanocavities

Nature Communications

Wolf, Omri W.; Campione, Salvatore; Benz, Alexander; Ravikumar, Arvind P.; Liu, Sheng L.; Luk, Ting S.; Kadlec, Emil A.; Shaner, Eric A.; Klem, John F.; Sinclair, Michael B.; Brener, Igal B.

Coherent superposition of light from subwavelength sources is an attractive prospect for the manipulation of the direction, shape and polarization of optical beams. This phenomenon constitutes the basis of phased arrays, commonly used at microwave and radio frequencies. Here we propose a new concept for phased-array sources at infrared frequencies based on metamaterial nanocavities coupled to a highly nonlinear semiconductor heterostructure. Optical pumping of the nanocavity induces a localized, phase-locked, nonlinear resonant polarization that acts as a source feed for a higher-order resonance of the nanocavity. Varying the nanocavity design enables the production of beams with arbitrary shape and polarization. As an example, we demonstrate two second harmonic phased-array sources that perform two optical functions at the second harmonic wavelength (∼5μm): a beam splitter and a polarizing beam splitter. Proper design of the nanocavity and nonlinear heterostructure will enable such phased arrays to span most of the infrared spectrum.

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Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

Nanoscale

Liu, Sheng L.; Li, Changyi; Figiel, J.J.; Brueck, Steven R.J.; Brener, Igal B.; Wang, George T.

We report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ∼7 GPa. The GaN NW lasers, with heights of 4-5 μm and diameters ∼140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ∼40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. This approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.

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Nonpolar InGaN/GaN multi-quantum-well core-shell nanowire lasers

CLEO: Science and Innovations, CLEO-SI 2015

Li, Changyi; Wright, Jeremy B.; Liu, Sheng L.; Lu, Ping L.; Figiel, J.J.; Leung, Benjamin L.; Luk, Ting S.; Brener, Igal B.; Feezell, Daniel; Brueck, S.R.J.; Wang, George T.

Lasing is demonstrated from nonpolar III-nitride core-shell multi-quantum-well nanowires. The nanowire lasers were fabricated by coupling a top-down and bottom-up methodology and achieved lasing at wavelengths below the GaN bandedge. © OSA 2015.

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Tailored light-matter interaction through epsilon-near- zero modes

CLEO: QELS - Fundamental Science, CLEO_QELS 2015

Campione, Salvatore; Liu, Sheng L.; Benz, Alexander; Klem, John F.; Sinclair, Michael B.; Brener, Igal B.

We use epsilon-near-zero modes in semiconductor nanolayers to design a system whose spectral properties are controlled by their interaction with multi-dipole resonances. This design flexibility renders our platform attractive for efficient nonlinear composite materials. © OSA 2015.

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Third harmonic generation in ultrathin epsilon-near-zero media

CLEO: Science and Innovations, CLEO-SI 2015

Luk, Ting S.; De Ceglia, Domenico; Keeler, Gordon A.; Prasankumar, Rohit P.; Vincenti, Maria A.; Liu, Sheng L.; Scalora, Michael; Sinclair, Michael B.; Campione, Salvatore

We demonstrate efficient third harmonic generation from a 21.6nm-thick indium tin oxide film on glass substrate for a pump fundamental wavelength of 1350nm using the field enhancement properties of optical modes supported by epsilon-near-zero media. © OSA 2015.

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Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

Applied Physics Letters

Luk, Ting S.; De Ceglia, Domenico; Liu, Sheng L.; Keeler, Gordon A.; Prasankumar, Rohit P.; Vincenti, Maria A.; Scalora, Michael; Sinclair, Michael B.; Campione, Salvatore

We experimentally demonstrate efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm. A conversion efficiency of 3.3 × 10-6 is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

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Realizing high-quality, ultralarge momentum states and ultrafast topological transitions using semiconductor hyperbolic metamaterials

Journal of the Optical Society of America B: Optical Physics

Campione, Salvatore; Luk, Ting S.; Liu, Sheng L.; Sinclair, Michael B.

We employ both the effective medium approximation (EMA) and Bloch theory to compare the dispersion properties of semiconductor hyperbolic metamaterials (SHMs) at mid-infrared frequencies and metallic hyperbolic metamaterials (MHMs) at visible frequencies. This analysis reveals the conditions under which the EMA can be safely applied for both MHMs and SHMs. We find that the combination of precise nanoscale layering and the longer infrared operating wavelengths puts the SHMs well within the effective medium limit and, in contrast to MHMs, allows for the attainment of very high photon momentum states. In addition, SHMs allow for new phenomena such as ultrafast creation of the hyperbolic manifold through optical pumping. In particular, we examine the possibility of achieving ultrafast topological transitions through optical pumping which can photo-dope appropriately designed quantum wells on the femtosecond time scale.

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Gallium nitride nanotube lasers

Applied Physics Letters

Li, Changyi L.; Liu, Sheng L.; Hurtado, Antonio H.; Wright, Jeremy B.; Xu, Huiwen X.; Luk, Ting S.; Figiel, J.J.; Brener, Igal B.; Brueck, S.R.; Wang, George T.

Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

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Optical properties of transiently-excited semiconductor hyperbolic metamaterials

Optical Materials Express

Campione, Salvatore; Luk, Ting S.; Liu, Sheng L.; Sinclair, Michael B.

Ultrafast optical excitation of photocarriers has the potential to transform undoped semiconductor superlattices into semiconductor hyperbolic metamaterials (SHMs). In this paper, we investigate the optical properties associated with such ultrafast topological transitions. We first show reflectance, transmittance, and absorption under TE and TM plane wave incidence. In the unpumped state, the superlattice exhibits a frequency region with high reflectance (>80%) and a region with low reflectance (<1%) for both TE and TM polarizations over a wide range of incidence angles. In contrast, in the photopumped state, the reflectance for both frequencies and polarizations is very low (<1%) for a similar range of angles. Interestingly, this system can function as an all-optical reflection switch on ultrafast timescales. Furthermore, for TM incidence and close to the epsilon-near-zero point of the longitudinal permittivity, directional perfect absorption on ultrafast timescales may also be achieved. Finally, we discuss the onset of negative refraction in the photopumped state.

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Directional perfect absorption using deep subwavelength low-permittivity films

Physical Review B - Condensed Matter and Materials Physics

Luk, Ting S.; Campione, Salvatore; Kim, Iltai; Feng, Simin; Jun, Young C.; Liu, Sheng L.; Wright, Jeremy B.; Brener, Igal B.; Catrysse, Peter B.; Fan, Shanhui; Sinclair, Michael B.

We experimentally demonstrate single beam directional perfect absorption (to within experimental accuracy) of p-polarized light in the near-infrared using unpatterned, deep subwavelength films of indium tin oxide (ITO) on Ag. The experimental perfect absorption occurs slightly above the epsilon-near-zero (ENZ) frequency of ITO, where the permittivity is less than 1 in magnitude. Remarkably, we obtain perfect absorption for films whose thickness is as low as ∼1/50th of the operating free-space wavelength and whose single pass attenuation is only ∼5%. We further derive simple analytical conditions for perfect absorption in the subwavelength-film regime that reveal the constraints that the thin layer permittivity must satisfy if perfect absorption is to be achieved. Then, to get a physical insight on the perfect absorption properties, we analyze the eigenmodes of the layered structure by computing both the real-frequency/complex-wavenumber and the complex-frequency/real-wavenumber modal dispersion diagrams. These analyses allow us to attribute the experimental perfect absorption condition to the crossover between bound and leaky behavior of one eigenmode of the layered structure. Both modal methods show that perfect absorption occurs at a frequency slightly larger than the ENZ frequency, in agreement with experimental results, and both methods predict a second perfect absorption condition at higher frequencies, attributed to another crossover between bound and leaky behavior of the same eigenmode. Our results greatly expand the list of materials that can be considered for use as ultrathin perfect absorbers and provide a methodology for the design of absorbing systems at any desired frequency. © 2014 American Physical Society.

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Results 51–75 of 118
Results 51–75 of 118