Publications

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We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444 kW cm-2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.

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Subwavelength-thin metasurfaces have shown great promises for the control of optical wavefronts, thus opening new pathways for the development of efficient flat optics. In particular, Huygens’ metasurfaces based on all-dielectric resonant meta-atoms have already shown a huge potential for practical applications with their polarization insensitivity and high transmittance efficiency. Here, we experimentally demonstrate a holographic Huygens’ metasurface based on dielectric resonant meta-atoms capable of complex wavefront control at telecom wavelengths. Our metasurface produces a hologram image in the far-field with 82% transmittance efficiency and 40% imaging efficiency. Such efficient complex wavefront control shows that Huygens’ metasurfaces based on resonant dielectric meta-atoms are a big step towards practical applications of metasurfaces in wavefront design related technologies, including computer-generated holograms, ultra-thin optics, security and data storage devices.

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Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double- and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximize the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. This design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.

Establishing processing-structure-property relationships for monolayer materials is crucial for a range of applications spanning optics, catalysis, electronics and energy. Presently, for molybdenum disulfide, a promising catalyst for artificial photosynthesis, considerable debate surrounds the structure/property relationships of its various allotropes. Here we unambiguously solve the structure of molybdenum disulfide monolayers using high-resolution transmission electron microscopy supported by density functional theory and show lithium intercalation to direct a preferential transformation of the basal plane from 2H (trigonal prismatic) to 1T′ (clustered Mo). These changes alter the energetics of molybdenum disulfide interactions with hydrogen (ΔG H), and, with respect to catalysis, the 1T′ transformation renders the normally inert basal plane amenable towards hydrogen adsorption and hydrogen evolution. Indeed, we show basal plane activation of 1T′ molybdenum disulfide and a lowering of ΔG H from +1.6 eV for 2H to +0.18 eV for 1T′, comparable to 2H molybdenum disulfide edges on Au(111), one of the most active hydrogen evolution catalysts known.

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QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. During the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.

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There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2 phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

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