Variability of atomically precise tunnel junctions
Abstract not provided.
Publications
Designing Quantum Materials in Silicon Atom-by-Atom
Abstract not provided.
DEAL annual report
The digital electronics at the atomic limit (DEAL) project seeks to leverage Sandia's atomic-precision fabrication capability to realize the theorized orders-of-magnitude improvement in operating voltage for tunnel field effect transistors (TFETs) compared to CMOS. Not only are low-power digital circuits a critical element of many national security systems (e.g. satellites), TFETs can perform circuit functions inaccessible to CMOS (e.g. polymorphism).
Engineering quantum materials in silicon atom by atom
Abstract not provided.
All-optical backend for atomic precision fabrication
Abstract not provided.
Atomic-precision fabrication and metrology for epitaxial Si quantum devices
Abstract not provided.
BES: Artificial Hubbard Materials
Abstract not provided.
sMIM resolution tester: Hydrogen lithography chip S87
Abstract not provided.
Atomically Precise Single Donor Placement by STM Lithography
Abstract not provided.
BES: Artificial Hubbard Materials
Abstract not provided.
Transport measurement summary: Chip N3 from Zyvex (10/16/2015)
Abstract not provided.
Scanning Tunneling Lithography Toolset
Abstract not provided.
Scanning microwave impedance microscopy of buried dopant nanostructures in silicon
Abstract not provided.
SiGe on sSOI: Nanoscale Engineering of Structures and Devices on Surfaces
Abstract not provided.
Bottom-up STM-fabricated Si:P devices
Abstract not provided.
Visualizing heavy fermion formation and their unconventional superconductivity in f-electron materials
Journal of the Physical Society of Japan
Abstract not provided.
Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures
Review of Scientific Instruments
Abstract not provided.
Results 101–117 of 117