Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs
IEEE Transactions on Nuclear Science, Dec. 2011
Abstract not provided.
Publications
Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains
Abstract not provided.
Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs
Abstract not provided.
Direct Comparison of Charge Collection from Single-Photon and Two-Photon Laser Testing Techniques
IEEE Transactions on Nuclear Science
Abstract not provided.
Effects of moisture on radiation-induced degradation in CMOS SOI transistors
IEEE Transactions on Nuclear Science
The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μSOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (e.g., thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to enhanced radiation-induced degradation. © 2010 IEEE.
Direct comparison of charge collection from single-photon and two-photon laser testing techniques
The amounts of charge collection by single-photon absorption to that by two-photon absorption laser testing techniques have been directly compared using specially made SOI diodes. Details of this comparison are discussed.
Direct comparison of charge collection from single-photon and two-photon laser testing techniques
Abstract not provided.
Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging
IEEE Transactions on Nuclear Science
Abstract not provided.
On-chip monitoring of MEMS gear motion
We have designed and fabricated a polysilicon sidewall-contact motion monitor that fits in between the teeth of a MEMS gear. The monitor has a center grounded member that is moved into contact with a pad held at voltage. When observing motion, however, the monitor fails after only a few actuations. A thorough investigation of the contacting interfaces revealed that for voltages > 5 V with a current limit of 100 pA, the main conduction process is Fowler-Nordheim tunneling. After a few switch cycles, the polysilicon interfaces became insulating. This is shown to be a permanent change and the suspected mechanism is field-induced oxidation of the asperity contacts. To reduce the effects of field-induced oxidation, tests were performed at 0.5 V and no permanent insulation was observed. However, the position of the two contacting surfaces produced three types of conduction processes: Fowler-Nordheim tunneling, ohmic, and insulator, which were observed in a random order during switch cycling. The alignment of contact asperities produced this positional effect.
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