Publications

Klem, John F.; Kim, Jin K.; Hawkins, Samuel D.; Leonhardt, Darin L.; Fortune, Torben R.; Coon, Wesley T.

Abstract not provided.

Klem, John F.; Hawkins, Samuel D.; Kim, Jin K.; Leonhardt, Darin L.; Shaner, Eric A.; Fortune, Torben R.; Keeler, Gordon A.

Abstract not provided.

Proceedings of SPIE - The International Society for Optical Engineering

Klem, John F.; Kim, Jin K.; Cich, M.J.; Hawkins, Samuel D.; Fortune, T.R.; Rienstra, Jeffrey L.

We have fabricated mid-wave infrared photodetectors containing InAsSb absorber regions and AlAsSb barriers in n-barrier-n (nBn) and n-barrier-p (nBp) configurations, and characterized them by current-voltage, photocurrent, and capacitance-voltage measurements in the 100-200 K temperature range. Efficient collection of photocurrent in the nBn structure requires application of a small reverse bias resulting in a minimum dark current, while the nBp devices have high responsivity at zero bias. When biasing both types of devices for equal dark currents, the nBn structure exhibits a differential resistance significantly higher than the nBp, although the nBp device may be biased for arbitrarily low dark current at the expense of much lower dynamic resistance. Capacitance-voltage measurements allow determination of the electron concentration in the unintentionally-doped absorber material, and demonstrate the existence of an electron accumulation layer at the absorber/barrier interface in the nBn device. Numerical simulations of idealized nBn devices demonstrate that photocurrent collection is possible under conditions of minimal absorber region depletion, thereby strongly suppressing depletion region Shockley-Read-Hall generation. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Serkland, Darwin K.; Luker, Spencer M.; Keeler, Gordon A.; Geib, K.M.; Peake, Gregory M.; Hargett, Terry H.; Klem, John F.; Hawkins, Samuel D.; Sullivan, Charles T.

Abstract not provided.

Clevenger, Jascinda C.; Patrizi, G.A.; Peterson, T.C.; Cich, Michael C.; Baca, A.G.; Klem, John F.; Plut, Thomas A.; Hawkins, Samuel D.; Sullivan, Charles T.

Abstract not provided.

ECS Transactions

Clevenger, J.B.; Patrizi, G.A.; Peterson, T.C.; Cich, M.J.; Baca, A.G.; Klem, John F.; Plut, Thomas A.; Fortune, T.R.; Hightower, M.S.; Torres, D.; Hawkins, Samuel D.; Sullivan, Charles T.

Specially designed Pnp heterojunction bipolar transistors (HBT's) in the AlGaAs/GaAs material system can offer improved radiation response over commercially-available silicon bipolar junction transistors (BJT's). To be a viable alternative to the silicon Pnp BJT, improvements to the manufacturability of the HBT were required. Utilization of a Pd/Ge/Au non-spiking ohmic contact to the base and implementation of a PECVD silicon nitride hard mask for wet etch control were the primary developments that led to a more reliable fabrication process. The implementation of the silicon nitride hard mask and the subsequent process improvements increased the average electrical yield from 43% to 90%. © The Electrochemical Society.

Serkland, Darwin K.; Childs, Kenton D.; Koudelka, Robert K.; Geib, K.M.; Klem, John F.; Hawkins, Samuel D.; Patel, Rupal K.

The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant uncertainty existed about the quantum efficiency at 1550 nm the necessary operating temperature. This project has resulted in several conclusions after fabrication and measurement of the proposed structures. We have successfully demonstrated the Ge/Si proof-of-concept in producing high analog gain in a silicon region while absorbing in a Ge region. This has included significant Ge processing infrastructure development at Sandia. However, sensitivity is limited at low temperatures due to high dark currents that we ascribe to tunneling. This leaves remaining uncertainty about whether this structure can achieve the desired performance with further development. GM detection in InGaAs/InAlAs, Ge/Si, Si and pure Ge devices fabricated at Sandia was shown to overcome gain noise challenges, which represents critical learning that will enable Sandia to respond to future single photon detection needs. However, challenges to the operation of these devices in GM remain. The InAlAs multiplication region was not found to be significantly superior to current InP regions for GM, however, improved multiplication region design of InGaAs/InP APDs has been highlighted. For Ge GM detectors it still remains unclear whether an optimal trade-off of parameters can achieve the necessary sensitivity at 1550 nm. To further examine these remaining questions, as well as other application spaces for these technologies, funding for an Intelligence Community post-doc was awarded this year.

Blansett, Ethan B.; Klem, John F.; Hawkins, Samuel D.; Sanchez, Victoria S.; Sullivan, Charles T.; Wrobel, Theodore F.; Blansett, Ethan B.; Serkland, Darwin K.; Keeler, Gordon A.; Geib, K.M.; Karpen, Gary D.; Diaz, Melissa R.; Peake, Gregory M.; Hargett, Terry H.

This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.