Publications

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An AlN MEMS resonator technology has been developed, enabling massively parallel filter arrays on a single chip. Low-loss filter banks covering the 10 MHz--10-GHz frequency range have been demonstrated, as has monolithic integration with inductors and CMOS circuitry. The high level of integration enables miniature multi-bandm spectrally aware, and cognitive radios.

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In this work we describe a new parallel lattice (PL) filter topology for electrically coupled AlN microresonator based filters. While 4th order, narrow percent bandwidth (0.03%) parallel filters based on high impedance (11 kΩ) resonators have been previously demonstrated at 20 MHz [1], in this work we realize low insertion loss PL filters at 400-500 MHz with termination impedances from 50 to 150 Ω and much wider percent bandwidths, up to 5.3%. Obtaining high percent bandwidth is a major challenge in microresonator based filters given the relatively low piezoelectric coupling coefficients, kt2, when compared to bulk (BAW) and surface (SAW) acoustic wave filter materials.

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In order to observe and quantify pressure levels generated during testing of energetic materials, a sensor array with high temporal resolution (∼1 ns) and extremely high pressure range (> 1 GPa) is needed. We have developed such a sensor array which utilizes a novel integrated high performance CMOS+MEMS process. ©2009 IEEE.

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Widely applied to RF filtering, AlN microresonators offer the ability to perform additional functions such as impedance matching and single-ended-to- differential conversion. This paper reports microresonators capable of transforming the characteristic impedance from input to output over a wide range while performing low loss filtering. Microresonant transformer theory of operation and equivalent circuit models are presented and compared with measured 2 and 3-Port devices. Impedance transformation ratios as large as 18:1 are realized with insertion losses less than 5.8 dB, limited by parasitic shunt capacitance. These impedance transformers occupy less than 0.052 mm2, orders of magnitude smaller than competing technologies in the VHF and UHF frequency bands. ©2009 IEEE.

Width extensional (WE) super high frequency (SHF) aluminum nitride (AlN) resonators have been fabricated using optical lithography. Solidly anchored WE resonators were shown to be superior to beam anchored resonators of the same size and it was verified that simply scaling resonator area does not improve insertion loss (IL). Resonators with an IL of -6.3 dB into 50 ohms at 4.1 GHz and -7.2 dB at 6.8 GHz have been demonstrated. This type of performance at 6.8 GHz is unprecedented for contour mode resonators and represents a 12.6 dB improvement over recently reported SHF AlN resonators. ©2009 IEEE.

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This paper reports post-CMOS compatible aluminum nitride dual mode resonator filters that realize 4th order band-pass filters in a single resonator device. Dual mode filters at 106 MHz operating in their fundamental mode are reported with insertion losses as low as 5.5 dB when terminated with 150 Ω. A notching technique is demonstrated for varying the 3 dB bandwidth of these filters from 0.15 to 0.7%, overcoming a significant limitation of previous work. Dual mode filters operating at their 5th and 10th overtones are reported scaling the operating frequencies of this class of device to 0.55 and 1.1 GHz.

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This work presents a new type of MEMS resonator based on launching an acoustic wave around a ring. Its maximum frequency is set by electrode spacing and can therefore provide a means for developing resonators with center frequencies in the GHz. In addition since the center frequency is dependent on the average radius it is not subject to lithographic process variations in ring width. We have demonstrated several Ring Waveguide (RWG) Resonators with center frequencies at 484 MHz and 1 GHz. In addition we have demonstrated a 4th order filter based on a RWG design.