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Pressure dependence of electronic states in secondary explosives: comparison between bulk and air/explosive interface

Farrow, Darcie F.; Farrow, Darcie F.; Kohl, Ian T.; Kohl, Ian T.; Rupper, Stephen G.; Rupper, Stephen G.; Alam, Mary K.; Alam, Mary K.; Martin, Laura E.; Martin, Laura E.; Fan, Hongyou F.; Fan, Hongyou F.; Bian, Kaifu B.; Bian, Kaifu B.; Knepper, Robert; Knepper, Robert; Marquez, Michael P.; Marquez, Michael P.; Kay, Jeffrey J.; Kay, Jeffrey J.

Abstract not provided.

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TYPE Conference Poster YEAR 2015
OSTI

Critical detonation thickness in vapor-deposited pentaerythritol tetranitrate (PETN) films

AIP Conference Proceedings

Tappan, Alexander S.; Knepper, Robert; Wixom, Ryan R.; Marquez, Michael P.; Ball, J.P.; Miller, Jill C.

The use of physical vapor deposition is an attractive technique to produce microenergetic samples to study sub-millimeter explosive behavior. Films of the high explosive PETN (pentaerythritol tetranitrate) were deposited through vacuum thermal sublimation. Deposition conditions were varied to understand the effect of substrate cooling capacity and substrate temperature during deposition. PETN films were characterized with surface profilometry and scanning electron microscopy. Detonation velocity versus PETN film thickness was analyzed using a variation of the standard form for analysis of the diameter effect. Results were compared with previous work conducted on PETN films deposited with lower substrate cooling capacity. Seemingly subtle variations in PETN deposition conditions led to differences in detonation behaviors such as critical thickness for detonation, detonation velocity at "infinite" thickness, and the shape of the critical thickness curves. © 2012 American Institute of Physics.

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TYPE Conference YEAR 2012
ScopusOSTI

Crystallization behavior of vapor-deposited hexanitroazobenzene (HNAB) films

AIP Conference Proceedings

Knepper, Robert; Tappan, Alexander S.; Rodriguez, Marko A.; Alam, M.K.; Martin, Laura E.; Marquez, M.P.

Vapor-deposited hexanitroazobenzene (HNAB) has been shown to form an amorphous structure as-deposited that crystallizes over a period ranging from several hours to several weeks, depending on the ambient temperature. Raman spectroscopy and x-ray diffraction were used to identify three distinct phases during the crystallization process: the as-deposited amorphous structure, the HNAB-II crystal structure, and an as-yet unidentified crystal structure. Significant qualitative differences in the nucleation and growth of the crystalline phases were observed between 65°C and 75°C. While the same two polymorphs form in all cases, significant variation in the quantities of each phase was observed as a function of temperature. © 2012 American Institute of Physics.

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TYPE Conference YEAR 2012
ScopusOSTI
Results 76–100 of 107
Results 76–100 of 107