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Sub-bandgap light-induced carrier generation at room temperature in silicon carbide MOS capacitors

Materials Science Forum

DasGupta, Sandeepan D.; Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Brock, Reinhard; Smith, Mark A.; Atcitty, Stanley A.

Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ∼20 minutes with monochromatic light (front side illumination) of energy 2.1 eV (intensity ∼5×10 16 cm-2s-1) in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi/Vc-CSi). © (2012) Trans Tech Publications.

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TYPE Conference YEAR 2012
ScopusOSTI

Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC metal oxide semiconductor capacitors

Applied Physics Letters

Dasgupta, Sandeepan; Armstrong, Andrew A.; Kaplar, Robert K.; Marinella, Matthew J.; Brock, Reinhard; Smith, Mark A.; Atcitty, Stanley A.

Carrier generation characteristics in n-type substrate silicon carbide (SiC) metal oxide semiconductor capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in approximately 20 min with monochromatic front side illumination of energy 2.1 eV in 4H-SiC for electric fields less than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy/carbon vacancy-antisite complex (VSi/Vc-C Si). © 2011 American Institute of Physics.

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TYPE Journal Article YEAR 2011
ScopusOSTIDOI

High power semiconductor devices for facts: Current state of the art and opportunities for advanced materials

ECS Transactions

Marinella, M.J.; Atcitty, Stanley A.; DasGupta, Sandeepan D.; Kaplar, Robert K.; Smith, Mark A.

Flexible AC Transmission Systems (FACTS) use advanced power electronics to minimize reactive power loss on the grid. Power devices used in FACTS systems must be capable of switching several thousand amps at voltages of 1-10 kV. Traditionally, these systems have relied on silicon thyristors, but recently have also began to incorporate insulated gate bipolar transistors. FACTS systems present an opportunity for emerging SiC and GaN power transistors, which offer major efficiency gains. However, for these advanced materials to be considered for use in high consequence grid level systems like FACTS controllers, excellent reliability must be demonstrated. ©The Electrochemical Society.

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TYPE Conference YEAR 2011
ScopusOSTI

Power electronics reliability

Smith, Mark A.; Kaplar, Robert K.; Marinella, Matthew J.; Stanley, James B.

The project's goals are: (1) use experiments and modeling to investigate and characterize stress-related failure modes of post-silicon power electronic (PE) devices such as silicon carbide (SiC) and gallium nitride (GaN) switches; and (2) seek opportunities for condition monitoring (CM) and prognostics and health management (PHM) to further enhance the reliability of power electronics devices and equipment. CM - detect anomalies and diagnose problems that require maintenance. PHM - track damage growth, predict time to failure, and manage subsequent maintenance and operations in such a way to optimize overall system utility against cost. The benefits of CM/PHM are: (1) operate power conversion systems in ways that will preclude predicted failures; (2) reduce unscheduled downtime and thereby reduce costs; and (3) pioneering reliability in SiC and GaN.

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TYPE Conference YEAR 2010
OSTI
Results 251–275 of 283
Results 251–275 of 283