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Cavity evolution at grain boundaries as a function of radiation damage and thermal conditions in nanocrystalline nickel

Materials Research Letters

Muntifering, Brittany R.; Blair, Sarah J.; Gong, Cajer; Dunn, Aaron; Dingreville, Remi P.; Qu, Jianmin; Hattar, Khalid M.

Enhanced radiation tolerance of nanostructured metals is attributed to the high density of interfaces that can absorb radiationinduced defects. Here, cavity evolution mechanisms during cascade damage, helium implantation, and annealing of nanocrystalline nickel are characterized via in situ transmission electron microscopy (TEM). Films subjected to self-ion irradiation followed by helium implantation developed evenly distributed cavity structures, whereas films exposed in the reversed order developed cavities preferentially distributed along grain boundaries. Post-irradiation annealing and orientation mapping demonstrated uniform cavity growth in the nanocrystalline structure, and cavities spanning multiple grains. These mechanisms suggest limited ability to reduce swelling, despite the stability of the nanostructure.

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TYPE Journal Article YEAR 2016
ScopusOSTIDOI

Feasibility of Observing and Characterizing Single Ion Strikes in Microelectronic Components

Dingreville, Remi P.; Hattar, Khalid M.; Bufford, Daniel C.

The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I3TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.

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TYPE SAND Report YEAR 2015
OSTIDOI
Results 126–150 of 174
Results 126–150 of 174