Thin Crystalline Silicon Photovoltaics Simulations
Abstract not provided.
Publications
Ultralow Power Silicon Microphotonics Communications Platform
Abstract not provided.
Limits to Silicon Modulator Bandwidth and Power Consumption
Abstract not provided.
Limits to Silicon Modulator Bandwidth and Power Consumption
Abstract not provided.
Ultralow power silicon microdisk modulators and switches
2008 5th International Conference on Group IV Photonics, GFP
We demonstrate a 4μm silicon microdisk modulator with a power consumption of 85fJ/bit. The modulator utilizes a reverse-biased. vertical p-n junction to achieve 10Gb/s data transmission, with 3.5V drive voltage, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators. © 2008 IEEE Institute of Electrical and Electronics Engineers.
Maximally confined silicon microdisk and microring modulators and switches
Abstract not provided.
Modeling physical qubits using tightbinding and effective mass theories
Abstract not provided.
Vertical Junction Microdisk Modulators and Switches
Nature Photonics
Abstract not provided.
Steps toward on chip integration of single electron devices with CMOS electronics
Abstract not provided.
Photonic Interconnects and Processing for Optical Computing
Abstract not provided.
Maximally confined high-speed second-order silicon microdisk switches
We demonstrate the first high-speed second-order silicon microdisk bandpass switch. The switch, constructed of a pair of 3 {micro}m radii active microdisks possesses {approx}40GHz flat-top passbands, a 4.2THz free-spectral-range, and a 2.4ns switching time.
Maximally confined high-speed second-order silicon microdisk switches
Optics InfoBase Conference Papers
We demonstrate the first high-speed second-order silicon microdisk bandpass switch. The switch, constructed of a pair of 3μm radii active microdisks possesses ~40GHz flat-top passbands, a 4.2THz free-spectral-range, and a 2.4ns switching time. © 2008 Optical Society of America.
Z-Beamlet: a multi-KJ TW-class laser for backlit x-radiography applications on the Z-Accelerator
Abstract not provided.
X-ray optics on the Z-Accelerator backlit with the Z-Beamlet Laser & Z-Petawatt Laser systems
Abstract not provided.
Quantitative analysis of microelectromechanical-based field effect transistors using scanning capacitance microscopy and device simulations
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Arsenic ion implant energy effects on CMOS gate oxide hardness
Proposed for publication in the IEEE Transactions on Nuclear Science.
Under conditions that were predicted as 'safe' by well-established TCAD packages, radiation hardness can still be significantly degraded by a few lucky arsenic ions reaching the gate oxide during self-aligned CMOS source/drain ion implantation. The most likely explanation is that both oxide traps and interface traps are created when ions penetrate and damage the gate oxide after channeling or traveling along polysilicon grain boundaries during the implantation process.
Results 51–66 of 66