Publications

Cruz-Campa, Jose L.; Pluym, Tammy P.; Resnick, Paul J.; Young, Ralph W.; Clews, Peggy J.; Okandan, Murat O.; Grubbs, Robert K.; Nielson, Gregory N.

Abstract not provided.

Lentine, Anthony L.; Young, Ralph W.

Abstract not provided.

Young, Ralph W.; Lentine, Anthony L.; Zortman, William A.

Abstract not provided.

Lentine, Anthony L.; Young, Ralph W.; Zortman, William A.

Abstract not provided.

2008 5th International Conference on Group IV Photonics, GFP

Watts, Michael W.; Trotter, Douglas C.; Young, Ralph W.; Lentine, Anthony L.

We demonstrate a 4μm silicon microdisk modulator with a power consumption of 85fJ/bit. The modulator utilizes a reverse-biased. vertical p-n junction to achieve 10Gb/s data transmission, with 3.5V drive voltage, BER<10-12, and without signal pre-emphasis. High-speed silicon bandpass switches are constructed from pairs of modulators. © 2008 IEEE Institute of Electrical and Electronics Engineers.

Young, Ralph W.; Lentine, Anthony L.

Abstract not provided.

Muller, Richard P.; Carroll, Malcolm; Young, Ralph W.; Sears, Mark P.; Lilly, Michael L.; Eng, Kevin E.; Tracy, Lisa A.

Abstract not provided.

Nature Photonics

Young, Ralph W.; Lentine, Anthony L.

Abstract not provided.

Gurrieri, Thomas G.; Carroll, Malcolm; Childs, Kenton D.; Hamlet, Jason H.; Young, Ralph W.; Akinnikawe, Erin M.; Levy, James E.; Kim, Jin K.; Lilly, Michael L.

Abstract not provided.

Lentine, Anthony L.; Watts, Michael W.; Davids, Paul D.; Young, Ralph W.

Abstract not provided.

Young, Ralph W.

We demonstrate the first high-speed second-order silicon microdisk bandpass switch. The switch, constructed of a pair of 3 {micro}m radii active microdisks possesses {approx}40GHz flat-top passbands, a 4.2THz free-spectral-range, and a 2.4ns switching time.

Optics InfoBase Conference Papers

Watts, Michael R.; Trotter, Douglas C.; Young, Ralph W.

We demonstrate the first high-speed second-order silicon microdisk bandpass switch. The switch, constructed of a pair of 3μm radii active microdisks possesses ~40GHz flat-top passbands, a 4.2THz free-spectral-range, and a 2.4ns switching time. © 2008 Optical Society of America.

Atherton, B.W.; Gonzales, Rita A.; Gurrieri, Thomas G.; Herrmann, Mark H.; Mulville, Thomas D.; Neely, Kelly A.; Rambo, Patrick K.; Rovang, Dean C.; Ruggles, Larry R.; Smith, Ian C.; Schwarz, Jens S.; Simpson, Walter W.; Sinars, Daniel S.; Speas, Christopher S.; Tafoya-Porras, Belinda T.; Wenger, D.F.; Young, Ralph W.; Adams, Richard G.; Bennett, Guy R.; Campbell, David V.; Carroll, Malcolm; Claus, Liam D.; Edens, Aaron E.; Geissel, Matthias G.

Abstract not provided.

Gonzales, Rita A.; Gurrieri, Thomas G.; Herrmann, Mark H.; Mulville, Thomas D.; Neely, Kelly A.; Rambo, Patrick K.; Rovang, Dean C.; Ruggles, Larry R.; Schwarz, Jens S.; Adams, Richard G.; Simpson, Walter W.; Sinars, Daniel S.; Smith, Ian C.; Speas, Christopher S.; Tafoya-Porras, Belinda T.; Wenger, D.F.; Young, Ralph W.; Edens, Aaron E.; Atherton, B.W.; Bennett, Guy R.; Campbell, David V.; Carroll, Malcolm; Claus, Liam D.; Geissel, Matthias G.

Abstract not provided.

Proposed for publication in Applied Physics Letters.

Nakakura, Craig Y.; Young, Ralph W.; Okandan, Murat O.; Draper, Bruce L.; Dyck, Meredith L.

Abstract not provided.

Proposed for publication in the IEEE Transactions on Nuclear Science.

Draper, Bruce L.; Shaneyfelt, Marty R.; Young, Ralph W.; Headley, Thomas J.; Dondero, Richard D.

Under conditions that were predicted as 'safe' by well-established TCAD packages, radiation hardness can still be significantly degraded by a few lucky arsenic ions reaching the gate oxide during self-aligned CMOS source/drain ion implantation. The most likely explanation is that both oxide traps and interface traps are created when ions penetrate and damage the gate oxide after channeling or traveling along polysilicon grain boundaries during the implantation process.