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Plasmon induced modification of silicon nanocrystals photoluminescence in presence of gold nanostripes

Scientific Reports

Dyakov, S.A.; Gippius, N.A.; Zhigunov, D.M.; Shalygina, O.A.; Vabishchevich, Polina V.; Shcherbakov, M.R.; Presnov, D.E.; Fedyanin, A.A.; Kashkarov, P.K.; Popov, S.P.; Gippius, N.A.; Tikhodeev, S.G.

Here, we report on the results of theoretical and experimental studies of photoluminescense of silicon nanocrystals in the proximity to plasmonic modes of different types. In the studied samples, the type of plasmonic mode is determined by the filling ratio of a one-dimensional array of gold stripes which covers the thin film with silicon nanocrystals on a quartz substrate. We analyze the extinction, photoluminesce spectra and decay kinetics of silicon nanocrystals and show that the incident and emitted light is coupled to the corresponding plasmonic mode. We demonstrate the modification of the extinction and photoluminesce spectra under the transition from wide to narrow gold stripes. The experimental extinction and photoluminescense spectra are in good agreement with theoretical calculations performed by the rigorous coupled wave analysis. Finally, we study the contribution of individual silicon nanocrystals to the overall photoluminescense intensity, depending on their spacial position inside the structure.

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Enhanced second-harmonic generation in broken symmetry III-V semiconductor metasurfaces driven by Fano resonance

Optics InfoBase Conference Papers

Vabishchevich, Polina V.; Liu, Sheng; Sinclair, Michael B.; Keeler, Gordon A.; Peake, Gregory M.; Brener, Igal B.

We use broken symmetry III-V semiconductor Fano metasurfaces to substantially improve the efficiency of second-harmonic generation (SHG) in the near infrared, compared to SHG obtained from metasurfaces created using symmetrical Mie resonators.

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III-V semiconductor metasurface as the optical metamixer

Optics InfoBase Conference Papers

Vabishchevich, Polina V.; Liu, S.; Vaskin, A.; Reno, J.L.; Keeler, G.A.; Sinclair, Michael B.; Staude, I.; Brener, Igal B.

In this work, we experimentally demonstrate simultaneous occurrence of second-,third-, fourth-harmonic generation, sum-frequency generation, four-wave mixing and six-wave mixing processes in III-V semiconductor metasurfaces with spectra spanning from the UV to the near-IR.

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Frequency-mixing in GaAs dielectric metasurfaces

International Conference on Optical MEMS and Nanophotonics

Vabishchevich, Polina V.; Liu, Sheng L.; Vaskin, A.; Reno, J.L.; Keeler, G.A.; Sinclair, Michael B.; Staude, I.; Brener, Igal B.

We experimentally demonstrate resonantly enhanced nonlinear optical processes such as 2nd-, 3rd-, and 4th-harmonic generations, sum-frequency generation, four-wave mixing processes, etc., in the visible and near-IR using GaAs dielectric metasurfaces.

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III-V dielectric metasurfaces: Enhanced nonlinearities and emission control

Optics InfoBase Conference Papers

Liu, Sheng L.; Vaskin, Aleksandr; Vabishchevich, Polina V.; Addamane, Sadhvikas; Keeler, Gordon A.; Reno, J.L.; Yang, Yuanmu Y.; Staude, Isabelle; Balarishnan, Ganesh; Sinclair, Michael B.; Brener, Igal B.

Using III-V dielectric metasurfaces, we experimentally demonstrate resonantly enhanced harmonic generations up to the 4th order. Moreover, we observe large enhancements and spectral tailoring of the photoluminescence of quantum dots embedded inside dielectric metasurfaces. © OSA 2017.

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Results 26–34 of 34
Results 26–34 of 34