Publications

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High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

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Aerosol deposition (AD) is a solid-state deposition technology that has been developed to fabricate ceramic coatings nominally at room temperature. Sub-micron ceramic particles accelerated by pressurized gas impact, deform, and consolidate on substrates under vacuum. Ceramic particle consolidation in AD coatings is highly dependent on particle deformation and bonding; these behaviors are not well understood. In this work, atomistic simulations and in situ micro-compressions in the scanning electron microscope, and the transmission electron microscope (TEM) were utilized to investigate fundamental mechanisms responsible for plastic deformation/fracture of particles under applied compression. Results showed that highly defective micron-sized alumina particles, initially containing numerous dislocations or a grain boundary, exhibited no observable shape change before fracture/fragmentation. Simulations and experimental results indicated that particles containing a grain boundary only accommodate low strain energy per unit volume before crack nucleation and propagation. In contrast, nearly defect-free, sub-micron, single crystal alumina particles exhibited plastic deformation and fracture without fragmentation. Dislocation nucleation/motion, significant plastic deformation, and shape change were observed. Simulation and TEM in situ micro-compression results indicated that nearly defect-free particles accommodate high strain energy per unit volume associated with dislocation plasticity before fracture. The identified deformation mechanisms provide insight into feedstock design for AD.

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This paper describes the friction and wear behavior of a Co–Cr alloy sliding on a Ta–W alloy. Measurements were performed in a pin-on-flat configuration with a hemispherically tipped Co-base alloy pin sliding on a Ta–W alloy flat from ambient to 430 °C. Focused ion beam-scanning electron microscopy (FIB-SEM) and cross-sectional transmission electron microscopy (TEM) were used to identify the friction-induced changes to the chemistry and crystal structure in the subsurface regions of wear tracks. During sliding contact, transfer of material varied as a function of the test temperature, either from pin-to-flat, flat-to-pin, or both, resulting in either wear loss and/or volume gain. Friction coefficients (μ) and wear rates also varied as a function of test temperature. The lowest friction coefficient (μ=0.25) and wear rate (1×10−4 mm3/N m) were observed at 430 °C in argon atmosphere. This was attributed to the formation of a Co-base metal oxide layer (glaze), predominantly (Co, Cr)O with Rocksalt crystal structure, on the pin surface. Part of this oxide film transferred to the wear track on Ta–W, providing a self-mated oxide-on-oxide contact. Once the oxide glaze is formed, it is able to provide friction reduction for the entire temperature range of this study, ambient to 430 °C. The results of this study indicate that glazing the surfaces of Haynes alloys with continuous layers of cobalt chrome oxide prior to wear could protect the cladded surfaces from damage.

We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea = 12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.