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Localized corrosion of low-carbon steel at the nanoscale

npj Materials Degradation

Hayden, Steven C.; Chisholm, Claire; Grudt, Rachael O.; Aguiar, Jeffery A.; Mook, William M.; Kotula, Paul G.; Pilyugina, Tatiana S.; Bufford, Daniel C.; Hattar, Khalid M.; Kucharski, Timothy J.; Taie, Ihsan M.; Ostraat, Michele L.; Jungjohann, Katherine L.

Mitigating corrosion remains a daunting challenge due to localized, nanoscale corrosion events that are poorly understood but are known to cause unpredictable variations in material longevity. Here, the most recent advances in liquid-cell transmission electron microscopy were employed to capture the advent of localized aqueous corrosion in carbon steel at the nanoscale and in real time. Localized corrosion initiated at a triple junction formed by a solitary cementite grain and two ferrite grains and then continued at the electrochemically-active boundary between these two phases. With this analysis, we identified facetted pitting at the phase boundary, uniform corrosion rates from the steel surface, and data that suggest that a re-initiating galvanic corrosion mechanism is possible in this environment. These observations represent an important step toward atomically defining nanoscale corrosion mechanisms, enabling the informed development of next-generation inhibition technologies and the improvement of corrosion predictive models.

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Spin transport in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer as a function of temperature

AIP Advances

Chen, Yizhang; Cogulu, Egecan; Roy, Debangsu; Ding, Jinjun; Mohammadi, Jamileh B.; Kotula, Paul G.; Missert, Nancy A.; Wu, Mingzhong; Kent, Andrew D.

We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in a yttrium iron garnet (YIG) YIG/NiO/YIG trilayer on a gadolinium gallium garnet (GGG) substrate were detected using the inverse spin Hall effect (ISHE) in Pt. By studying samples with different NiO thicknesses, the spin diffusion length of NiO was determined to be ∼3.8 nm at room temperature. Surprisingly, a large increase of the SSE signal was observed below 30 K, and the field dependence of the signal closely follows a Brillouin function for an S=7/2 spin. The increase of the SSE signal at low temperatures could thus be associated with the paramagnetic SSE from the GGG substrate. Besides, a broad peak in the SSE response was observed around 100 K. These observations are important in understanding the generation and transport properties of spin currents through magnetic insulators and the role of a paramagnetic substrate in spin current generation.

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Visualization of Kirkendall Voids at Cu-Au Interfaces by In Situ TEM Heating Studies

JOM

Kotula, Paul G.; Prasad, Somuri V.

Gold-plated copper alloys are used extensively in electrical contacts where diffusional processes are known to cause contact degradation. An in situ transmission electron microscopy (TEM) heating study was carried out to provide fundamental understanding of the aging phenomena in reasonable timescales. Samples to visualize the interface in TEM were prepared by focused ion beam (FIB) microscopy and heated in situ up to 350°C while holding at intermediate temperatures to enable imaging. The grain boundaries in Au coatings, specifically the columnar boundaries, provided rapid pathways for diffusion of Cu all the way to the Au surface. This unequal diffusion created vacancies in Cu which coalesced into Kirkendall voids. This in situ technique has been applied to visualize the diffusion pathways in electroplated and sputtered Au films deposited directly on Cu, as well the role of Ni and NiP as barrier layers for mitigating Cu diffusion.

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Thickness dependence of Al0.88Sc0.12N thin films grown on silicon

Thin Solid Films

Knisely, Kathrine E.; Douglas, Erica A.; Mudrick, John M.; Rodriguez, Mark A.; Kotula, Paul G.

The thickening behavior of aluminum scandium nitride (Al0.88Sc0.12N) films grown on Si(111) substrates has been investigated experimentally using X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy, and residual stress measurement. Al0.88Sc0.12N films were grown with thicknesses spanning 14 nm to 1.1 um. TEM analysis shows that the argon sputter etch used to remove the native oxide prior to deposition produced an amorphous, oxygen-rich surface, preventing epitaxial growth. XRD analysis of the films show that the A1ScN(002) orientation improves as the films thicken and the XRD A1ScN(002) rocking curve full width half maximum decreases to 1.34 q for the 1.1 pm thick film. XRD analysis shows that the unit cell is expanded in both the a- and c-axes by Sc doping; the a-axis lattice parameter was measured to be 3.172 ± 0.007 A and the c-axis lattice parameter was measured to be 5.000 ± 0.001 A, representing 1.96% and 0.44% expansions over aluminum nitride lattice parameters, respectively. The grain size and roughness increase as the film thickness increases. A stress gradient forms through the film; the residual stress grows more tensile as the film thickens, from -1.24 GPa to +8.5MPa.

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Results 26–50 of 318
Results 26–50 of 318