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SOI substrate removal for SEE characterization: Techniques and applications

IEEE Transactions on Nuclear Science

Shaneyfelt, Marty R.; Schwank, James R.; Dodd, Paul E.; Stevens, Jeffrey S.; Vizkelethy, Gyorgy; Swanson, Scot E.; Dalton, Scott M.

Techniques for removing the back substrate of SOI devices are described for both packaged devices and devices at the die level. The use of these techniques for microbeam, heavy-ion, and laser testing are illustrated. © 2012 IEEE.

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TYPE Conference YEAR 2012
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Hardness assurance testing for proton direct ionization effects

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Schwank, James R.; Shaneyfelt, Marty R.; Ferlet-Cavrois, Véronique; Dodd, Paul E.; Blackmore, Ewart W.; Pellish, Jonathan A.; Rodbell, Kenneth P.; Heidel, David F.; Marshall, Paul W.; LaBel, Kenneth A.; Gouker, Pascale M.; Tam, Nelson; Wong, Richard; Wen, Shi J.; Reed, Robert A.; Dalton, Scott M.; Swanson, Scot E.

The potential for using the degraded beam of high-energy proton radiation sources for proton hardness assurance testing for ICs that are sensitive to proton direct ionization effects are explored. SRAMs were irradiated using high energy proton radiation sources (∼67-70 MeV). The proton energy was degraded using plastic or Al degraders. Peaks in the SEU cross section due to direct ionization were observed. To best observe proton direct ionization effects, one needs to maximize the number of protons in the energy spectrum below the proton energy SEU threshold. SRIM simulations show that there is a tradeoff between increasing the fraction of protons in the energy spectrum with low energies by decreasing the peak energy and the reduction in the total number of protons as protons are stopped in the device as the proton energy is decreased. Two possible methods for increasing the number of low energy protons is to decrease the primary proton energy to reduce the amount of energy straggle and to place the degrader close to the DUT to minimize angular dispersion. These results suggest that high-energy proton radiation sources may be useful for identifying devices sensitive to proton direct ionization. © 2011 IEEE.

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TYPE Conference YEAR 2011
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A comprehensive understanding of the efficacy of N-ring SEE hardening methodologies in SiGe HBTs

IEEE Transactions on Nuclear Science

Phillips, Stan D.; Moen, Kurt A.; Najafizadeh, Laleh; Diestelhorst, Ryan M.; Sutton, Akil K.; Cressler, John D.; Vizkelethy, Gyorgy; Dodd, Paul E.; Marshall, Paul W.

We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV 16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the case of digital shift registers implemented with N-Ring SiGe HBTs irradiated in a broadbeam environment at Texas A&M's Cyclotron Institute. The error cross-section curve of the N-Ring based register is found to be larger at larger ion LETs than the standard SiGe register, which is clearly counter-intuitive. We have worked to resolve the discrepancy between the measured circuit results and the device-level IBICC measurements, by re-measuring single-device N-Ring SiGe HBTs using a time-resolved ion beam induced charge (TRIBIC) set-up that allows direct capture of nodal transients. Coupling these measurements with full 3-D TCAD simulations provides complete insight into the origin of transient currents in an N-Ring SiGe HBT. The detailed structure of these transients and their bias dependencies are discussed, together with the ramifications for the design of space-borne analog and digital circuits using SiGe HBTs. © 2010 IEEE.

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TYPE Conference YEAR 2010
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Design of digital circuits using inverse-mode cascode SiGe HBTs for single event upset mitigation

IEEE Transactions on Nuclear Science

Thrivikraman, Tushar K.; Wilcox, Edward; Phillips, Stanley D.; Cressler, John D.; Marshall, Cheryl; Vizkelethy, Gyorgy; Dodd, Paul E.; Marshall, Paul

We report on the design and measured results of a new SiGe HBT radiation hardening by design technique called the inverse-mode cascode (IMC). A third-generation SiGe HBT IMC device was tested in a time resolved ion beam induced charge collection (TRIBICC) system, and was found to have over a 75% reduction in peak current transients with the use of an n-Tiedown on the IMC sub-collector node. Digital shift registers in a 1st-generation SiGe HBT technology were designed and measured under a heavy-ion beam, and shown to increase the LET threshold over standard npn only shift registers. Using the CREME96 tool, the expected orbital bit-errors/day were simulated to be approximately 70% lower with the IMC shift register. These measured results help demonstrate the efficacy of using the IMC device as a low-cost means for improving the SEE radiation hardness of SiGe HBT technology without increasing area or power. © 2010 IEEE.

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TYPE Conference YEAR 2010
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Results 26–50 of 116
Results 26–50 of 116