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High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

Optics Express

Martinez, Nicolas J.D.; DeRose, Christopher T.; Brock, Reinhard W.; Starbuck, Andrew L.; Pomerene, Andrew P.; Lentine, Anthony L.; Trotter, Douglas C.; Davids, Paul D.

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

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TYPE Journal Article YEAR 2016
ScopusOSTIDOI

An adiabatic/diabatic polarization beam splitter

5th IEEE Photonics Society Optical Interconnects Conference, OI 2016

Cai, Hong; Boynton, Nicholas; Lentine, Anthony L.; Pomerene, Andrew P.; Trotter, Douglas C.; Starbuck, Andrew L.; Davids, Paul D.; DeRose, Christopher T.

We demonstrate an on-chip polarization beam splitter (PBS), which is adiabatic for the transverse magnetic mode, and diabatic for the transverse electric mode. The PBS has a simple structure that is tolerant to manufacturing variations and exhibits high polarization extinction ratios over a wide bandwidth.

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TYPE Conference Poster YEAR 2016
ScopusOSTIDOI

Silicon photonics platform for national security applications

IEEE Aerospace Conference Proceedings

Lentine, Anthony L.; DeRose, Christopher T.; Davids, Paul D.; Martinez, Nicolas J.D.; Zortman, William A.; Cox, Jonathan A.; Jones, Adam; Trotter, Douglas C.; Pomerene, Andrew P.; Starbuck, Andrew L.; Savignon, Daniel J.; Bauer, Todd B.; Wiwi, Michael W.; Chu, Patrick B.

We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.

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TYPE Conference Poster YEAR 2015
ScopusOSTIDOI

Application of plasmonic subwavelength structuring to enhance infrared detection

Proceedings of SPIE - The International Society for Optical Engineering

Peters, David W.; Davids, Paul D.; Kim, Jin K.; Leonhardt, Darin L.; Beechem, Thomas E.; Howell, Stephen W.; Ohta, Taisuke O.; Wendt, J.R.; Montoya, John A.

Nanoantennas are an enabling technology for visible to terahertz components and may be used with a variety of detector materials. We have integrated subwavelength patterned metal nanoantennas with various detector materials for infrared detection: midwave infrared indium gallium arsenide antimonide detectors, longwave infrared graphene detectors, and shortwave infrared germanium detectors. Nanoantennas offer a means to make infrared detectors much thinner, thus lowering the dark current and improving performance. The nanoantenna converts incoming plane waves to more tightly bound and concentrated surface waves. The active material only needs to extend as far as these bound fields. In the case of graphene detectors, which are only one or two atomic layers thick, such field concentration is a necessity for usable device performance, as single pass absorption is insufficient. The nanoantenna is thus the enabling component of these thin devices. However nanoantenna integration and fabrication vary considerably across these platforms as do the considerations taken into account during design. Here we discuss the motivation for these devices and show examples for the three material systems. Characterization results are included for the midwave infrared detector. © 2014 SPIE.

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TYPE Conference YEAR 2014
ScopusOSTI

Nanoantenna-enabled midwave infrared focal plane arrays

Proceedings of SPIE - The International Society for Optical Engineering

Peters, D.W.; Reinke, Charles M.; Davids, Paul D.; Klem, John F.; Leonhardt, Darin L.; Wendt, J.R.; Kim, Jin K.; Samora, S.

We demonstrate the effects of integrating a nanoantenna to a midwave infrared (MWIR) focal plane array (FPA). We model an antenna-coupled photodetector with a nanoantenna fabricated in close proximity to the active material of a photodetector. This proximity allows us to take advantage of the concentrated plasmonic fields of the nanoantenna. The role of the nanoantenna is to convert free-space plane waves into surface plasmons bound to a patterned metal surface. These plasmonic fields are concentrated in a small volume near the metal surface. Field concentration allows for a thinner layer of absorbing material to be used in the photodetector design and promises improvements in cutoff wavelength and dark current (higher operating temperature). While the nanoantenna concept may be applied to any active photodetector material, we chose to integrate the nanoantenna with an InAsSb photodiode. The geometry of the nanoantenna-coupled detector is optimized to give maximal carrier generation in the active region of the photodiode, and fabrication processes must be altered to accommodate the nanoantenna structure. The intensity profiles and the carrier generation rates in the photodetector active layers are determined by finite element method simulations, and iteration between optical nanoantenna simulation and detector modeling is used to optimize the device structure. © 2012 SPIE.

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TYPE Conference YEAR 2012
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Plasmonic integrated optics: Going the last few microns

2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010

Davids, Paul D.

Plasmonic integrated optics is an attempt to bridge the length scale gap between optics and nanometer scale electronic devices. Here we present a hybrid optical interconnect scheme which utilizes low loss dielectric waveguides for global interconnection and plasmonic structures for tightly confining light for local routing and mode manipulation.

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TYPE Conference YEAR 2010
ScopusOSTI

Transmissive infrared frequency selective surfaces and infrared antennas : final report for LDRD 105749

Davids, Paul D.; Cruz-Cabrera, A.A.; Basilio, Lorena I.; Wendt, J.R.; Kemme, S.A.; Johnson, William Arthur.; Loui, Hung L.

Plasmonic structures open up new opportunities in photonic devices, sometimes offering an alternate method to perform a function and sometimes offering capabilities not possible with standard optics. In this LDRD we successfully demonstrated metal coatings on optical surfaces that do not adversely affect the transmission of those surfaces at the design frequency. This technology could be applied as an RF noise blocking layer across an optical aperture or as a method to apply an electric field to an active electro-optic device without affecting optical performance. We also demonstrated thin optical absorbers using similar patterned surfaces. These infrared optical antennas show promise as a method to improve performance in mercury cadmium telluride detectors. Furthermore, these structures could be coupled with other components to lead to direct rectification of infrared radiation. This possibility leads to a new method for infrared detection and energy harvesting of infrared radiation.

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TYPE SAND Report YEAR 2009
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Results 51–96 of 96
Results 51–96 of 96