Hole spin qubits confined to lithographically - defined lateral quantum dots in Ge/SiGe heterostructures show great promise. On reason for this is the intrinsic spin - orbit coupling that allows all - electric control of the qubit. That same feature can be exploited as a coupling mechanism to coherently link spin qubits to a photon field in a superconducting resonator, which could, in principle, be used as a quantum bus to distribute quantum information. The work reported here advances the knowledge and technology required for such a demonstration. We discuss the device fabrication and characterization of different quantum dot designs and the demonstration of single hole occupation in multiple devices. Superconductor resonators fabricated using an outside vendor were found to have adequate performance and a path toward flip-chip integration with quantum devices is discussed. The results of an optical study exploring aspects of using implanted Ga as quantum memory in a Ge system are presented.
The ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ∼6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.
Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.
Kalugin, Nikolai G.; Jing, Lei; Morell, Eric S.; Dyer, Gregory C.; Wickey, Lee; Ovezmyradov, Mekan; Grine, Albert D.; Wanke, Michael W.; Shaner, Eric A.; Lau, Chun N.; Foa Torres, Luis E.F.; Fistul, Mikhail V.; Efetov, Konstantin B.
Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localized electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. The interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.
Shaner, Eric A.; Wanke, Michael W.; Grine, Albert D.; Kalugin, Nikolai G.; Jing, Lei J.; Morell, Eric S.; Dyer, Gregory C.; Wickey, Lee W.; Ovezmyradov, Mekan O.; Lau, Chun N.; F. Foa Torres, Luis E.; Fistul, Mikhail V.; Efetov, Konstantin B.
Optical nonlinearities and quantum coherences have the potential to enable efficient, high-temperature generation of coherent THz radiation. This LDRD proposal involves the exploration of the underlying physics using intersubband transitions in a quantum cascade structure. Success in the device physics aspect will give Sandia the state-of-the-art technology for high-temperature THz quantum cascade lasers. These lasers are useful for imaging and spectroscopy in medicine and national defense. Success may have other far-reaching consequences. Results from the in-depth study of coherences, dephasing and dynamics will eventually impact the fields of quantum computing, optical communication and cryptology, especially if we are successful in demonstrating entangled photons or slow light. An even farther reaching development is if we can show that the QC nanostructure, with its discrete atom-like intersubband resonances, can replace the atom in quantum optics experiments. Having such an 'artificial atom' will greatly improve flexibility and preciseness in experiments, thereby enhancing the discovery of new physics. This is because we will no longer be constrained by what natural can provide. Rather, one will be able to tailor transition energies and optical matrix elements to enhance the physics of interest. This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring optical nonlinearities in intersubband devices. Experimental and theoretical investigations were made to develop a fundamental understanding of light-matter interaction in a semiconductor system and to explore how this understanding can be used to develop mid-IR to THz emitters and nonclassical light sources.
THz quantum cascade lasers are of interest for use as solid-state local-oscillators in THz heterodyne receiver systems, especially for frequencies exceeding 2 THz and for use with non-cryogenic mixers which require mW power levels. Among other criteria, to be a good local oscillator, the laser must have a narrow linewidth and excellent frequency stability. Recent phase locking measurements of THz QCLs to high harmonics of microwave frequency reference sources as high as 2.7 THz demonstrate that the linewidth and frequency stability of QCLs can be more than adequate. Most reported THz receivers employing QCLs have used discrete source and detector components coupled via mechanically aligned free-space quasioptics. Unfortunately, retroreflections of the laser off of the detecting element can lead to deleterious feedback effects. Using a monolithically integrated transceiver with a Schottky diode monolithically integrated into a THz QCL, we have begun to explore the sensitivity of the laser performance to feedback due to retroreflections of the THz laser radiation. The transceiver allows us to monitor the beat frequency between internal Fabry-Perot modes of the QCL or between a QCL mode and external radiation incident on the transceiver. When some of the power from a free running Fabry-Perot type QCL is retroreflected with quasi-static optics we observe frequency pulling, mode splitting and chaos. Given the lack of calibrated frequency sources with sufficient stability and power to phase lock a QCL above a couple THz, attempts have been made to lock the absolute laser frequency by locking the beat frequency of a multimoded laser. We have phase locked the beat frequency between Fabry-Perot modes to an {approx}13 GHz microwave reference source with a linewidth less than 1 Hz, but did not see any improvment in stability of the absolute frequency of the laser. In this case, when some laser power is retroreflected back into the laser, the absolute frequency can be pulled significantly as a function of the external path length.
Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare different growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.
This report describes our efforts to quantify the behavior of micro-fabricated THz rectangular waveguides on a configurable, robust semiconductor-based platform. These waveguides are an enabling technology for coupling THz radiation directly from or to lasers, mixers, detectors, antennas, and other devices. Traditional waveguides fabricated on semiconductor platforms such as dielectric guides in the infrared or co-planar waveguides in the microwave regions, suffer high absorption and radiative losses in the THz. The former leads to very short propagation lengths, while the latter will lead to unwanted radiation modes and/or crosstalk in integrated devices. This project exploited the initial developments of THz micro-machined rectangular waveguides developed under the THz Grand Challenge Program, but instead of focusing on THz transceiver integration, this project focused on exploring the propagation loss and far-field radiation patterns of the waveguides. During the 9 month duration of this project we were able to reproduce the waveguide loss per unit of length in the waveguides and started to explore how the loss depended on wavelength. We also explored the far-field beam patterns emitted by H-plane horn antennas attached to the waveguides. In the process we learned that the method of measuring the beam patterns has a significant impact on what is actually measured, and this may have an effect on most of the beam patterns of THz that have been reported to date. The beam pattern measurements improved significantly throughout the project, but more refinements of the measurement are required before a definitive determination of the beam-pattern can be made.
LDRD Project 139363 supported experiments to quantify the performance characteristics of monolithically integrated Schottky diode + quantum cascade laser (QCL) heterodyne mixers at terahertz (THz) frequencies. These integrated mixers are the first all-semiconductor THz devices to successfully incorporate a rectifying diode directly into the optical waveguide of a QCL, obviating the conventional optical coupling between a THz local oscillator and rectifier in a heterodyne mixer system. This integrated mixer was shown to function as a true heterodyne receiver of an externally received THz signal, a breakthrough which may lead to more widespread acceptance of this new THz technology paradigm. In addition, questions about QCL mode shifting in response to temperature, bias, and external feedback, and to what extent internal frequency locking can improve stability have been answered under this project.