Publications

Jacobs-Gedrim, Robin B.; DiGregorio, Steven D.; Hughart, David R.; Van Heukelom, Michael V.; James, Conrad D.; Marinella, Matthew J.

Abstract not provided.

WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications

Matthews, C.; Flicker, Jack D.; Kaplar, Robert K.; Van Heukelom, Michael V.; Atcitty, Stanley A.; Kizilyalli, I.C.; Aktas, O.

The switching characteristics of vertical Gallium Nitride (v-GaN) diodes grown on GaN substrates are reported. v-GaN diodes were tested in a Double-Pulse Test Circuit (DPTC) and compared to test results for SiC Schottky Barrier Diodes (SBDs) and Si PiN diodes. The reported switching characteristics show that GaN diodes, like SiC SBDs, exhibit nearly negligible reverse recovery current compared to traditional Si PiN diodes. The reverse recovery for the v-GaN PiN diodes is limited by parasitics in the DPTC, precluding extraction of a meaningful recovery time. These results are very encouraging for power electronics based on v-GaN and demonstrate the potential for very fast, low-loss switching for these devices.

Kaplar, Robert K.; Matthews, C.; Flicker, Jack D.; Van Heukelom, Michael V.; Atcitty, Stanley A.; Kizilyalli, Isik C.; Aktas, Ozgur A.

Abstract not provided.

Jacobs-Gedrim, Robin B.; Hughart, David R.; Agarwal, Sapan A.; Finnegan, Patrick S.; Goeke, Ronald S.; Van Heukelom, Michael V.; Nowlin, Joshua N.; Wagner, Jamison W.; James, Conrad D.; Marinella, Matthew J.

Abstract not provided.

Armstrong, Andrew A.; Allerman, A.A.; Fischer, Arthur J.; King, Michael P.; Van Heukelom, Michael V.; Moseley, Michael; Kaplar, Robert K.; Wierer, J.Jr.; Crawford, Mary H.; Dickerson, Jeramy R.; Jayawardena, A.J.; Ahyi, A.A.; Dhar, S.D.

Abstract not provided.

Electronics Letters

Armstrong, Andrew A.; Allerman, A.A.; Fischer, Arthur J.; King, M.P.; Van Heukelom, Michael V.; Moseley, M.W.; Kaplar, Robert K.; Wierer, J.J.; Crawford, Mary H.; Dickerson, Jeramy R.

The realisation of a GaN high voltage vertical p-n diode operating at >3.9 kV breakdown with a specific on-resistance <0.9 mΩ cm2 is reported. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density >1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.