Publications

Abstract not provided.

Abstract not provided.

In this investigation, YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) films were fabricated via a metal acetate, trifluoroacetic acid based sol-gel route, and spin-coat deposited on (100) LaAlO{sub 3} with a focus on maximizing J{sub c}, while minimizing processing time. We demonstrate that the use of a low pO{sub 2} atmosphere during the pyrolysis stage can lead to at least a tetiold reduction in pyrolysis time, compared to a 1 atm. O{sub 2} ambient. High-quality YBCO films on LaAlO{sub 3}, with J{sub c} values up to 3 MA/cm{sup 2} at 77 K, can be routinely crystallized from these rapidly pyrolyzed films.

Abstract not provided.

Modest thermal annealing to 600°C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5%-10%. We report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases ∼15% due to the development of the nanocomposite structure. © 2000 American Institute of Physics.

HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} (Hg-1212) thin films were fabricated by exchanging the TI cations in TlBa{sub 2}CaCu{sub 2}O{sub 7-{delta}} (Tl-1212) thin films with Hg cations, causing a 30-K increase in Tc. To determine how this exchange effects such a Tc increase, the irreversibility lines, temperature dependence of critical current density, and temperature dependence of Hall angle of Hg-1212 and T1-1212 thin films were measured and then compared. The results strongly suggest that the Tc shift is caused by a doubling of charge carrier density.

The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces; their thicknesses increase with deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies <60 eV and increases for films grown using ion energies >160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of σ-to π-bonded carbon atoms. © 2000 American Institute of Physics.

Short pulse laser damage and ablation of amorphous, diamond-like carbon films is investigated. Material removal is due to fracture of the film and ejection of large fragments, which exhibit a broadband emission of microsecond duration.

Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of 3- and 4-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetic of PLD growth results in films becoming more ``diamondlike'', i.e. increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film.