OMVPE Growth of Al-Rich AlGaN Alloys for Power Electronics
Abstract not provided.
Publications
In-Operando Imaging of Field Spreading and Carrier Transport in GaN-Based pin Diodes
Abstract not provided.
Vertical AlxGa1-xN(x=0.3 and x=0.7) PiN Diodes for Power Electronics Applications
Abstract not provided.
Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride
Abstract not provided.
Numerical Simulations of III-Nitride Devices (invited)
Abstract not provided.
Ultra-Wide Bandgap AlGaN Materials for Electronics and Opto-Electronics (invited)
Abstract not provided.
Ultra-Wide-Bandgap AlGaN Power Electronic Devices
Abstract not provided.
Ultra-Wide-Bandgap AlGaN Power Diodes and Transistors
Abstract not provided.
Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited)
Abstract not provided.
Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited)
Abstract not provided.
Device Characteristics of an AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact
Abstract not provided.
An AlN/Al0.85Ga0.15N high electron mobility transistor
Applied Physics Letters
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.
Al00.3Ga0.7N PN diode with breakdown voltage >1600 V
Electronics Letters
Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.
Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance
Abstract not provided.
Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes
Abstract not provided.
An AlN/Al0.85Ga0.15N High Electron Mobility Transistor with A Regrown Ohmic Contact
Abstract not provided.
Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance
Abstract not provided.
Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance
Abstract not provided.
Generation and Characterization of Two-Photon Absorption Pulsed-Laser Single- Event Beam Line for Wide Band-Gap Materials: Application to Single-Event Transients in a Vertical GaN Diode
Abstract not provided.
Vertical GaN Devices for Power Electronics in Extreme Environments
Abstract not provided.
Generation-After-Next Power Electronics Using Ultra-Wide-Bandgap Semiconductors
Abstract not provided.
Ultra-Wide-Bandgap Semiconductors for Generation-After-Next Power Electronics
Abstract not provided.
Generation-After-Next Power Electronics Using Ultra-Wide-Bandgap Semiconductors
Abstract not provided.
Vertical GaN power diodes with a bilayer edge termination
IEEE Transactions on Electron Devices
Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. Simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.
III-nitride surface chemistry influence on band offsets of gate oxides on GaN
Abstract not provided.
Results 26–50 of 62