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Development characterization and modeling of a TaOx ReRAM for a neuromorphic accelerator

Marinella, Matthew J.; Mickel, Patrick R.; Lohn, Andrew L.; Hughart, David R.; Bondi, Robert J.; Mamaluy, Denis M.; Hjalmarson, Harold P.; Stevens, James E.; Decker, Seth D.; Apodaca, Roger A.; Evans, Brian R.; Aimone, James B.; Rothganger, Fredrick R.; James, Conrad D.; DeBenedictis, Erik

This report discusses aspects of neuromorphic computing and how it is used to model microsystems.

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Detection and characterization of multi-filament evolution during resistive switching

Applied Physics Letters

Mickel, Patrick R.; Lohn, Andrew L.; Marinella, Matthew J.

We report resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes and present a technique which enables the characterization of the evolution of multiple filaments within a single device during switching, including their temperature, heat flow, conductivity, and time evolving areas. Using a geometrically defined equivalent circuit, we resolve the individual current/voltage values of each filament and demonstrate that the switching curves of each filament collapse onto a common curve determined by the analytical steady-state resistive switching solution for filamentary switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance. © 2014 AIP Publishing LLC.

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Rutherford forward scattering and elastic recoil detection (RFSERD) as a method for characterizing ultra-thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Lohn, Andrew J.; Doyle, Barney L.; Stein, Gregory J.; Mickel, Patrick R.; Stevens, James E.; Marinella, Matthew J.

We present a novel ion beam analysis technique combining Rutherford forward scattering and elastic recoil detection (RFSERD) and demonstrate its ability to increase efficiency in determining stoichiometry in ultrathin (5-50 nm) films as compared to Rutherford backscattering. In the conventional forward geometries, scattering from the substrate overwhelms the signal from light atoms but in RFSERD, scattered ions from the substrate are ranged out while forward scattered ions and recoiled atoms from the thin film are simultaneously detected in a single detector. The technique is applied to tantalum oxide memristors but can be extended to a wide range of materials systems. © 2014 Published by Elsevier B.V.

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Results 201–225 of 342
Results 201–225 of 342