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GaN-based wide-bandgap power switching devices: From atoms to the grid

ECS Transactions

Atcitty, Stanley A.; Kaplar, Robert K.; DasGupta, Sandeepan D.; Marinella, Matthew J.; Armstrong, Andrew A.; Biedermann, Laura B.; Sun, Min; Palacios, Tomas; Smith, Mark A.

Emerging semiconductor switches based on the wide-bandgap semiconductor GaN have the potential to significantly improve the efficiency of portable power applications such as transportable energy storage. Such applications are likely to become more widespread as renewables such as wind and solar continue to come on-line. However, the long-term reliability of GaN-based power devices is relatively unexplored. In this paper, we describe joint work between Sandia National Laboratories and MIT on highvoltage AlGaN/GaN high electron mobility transistors. It is observed that the nature of current collapse is a strong function of bias conditions as well as device design, where factors such as Al composition in the barrier layer and surface passivation play a large role. Thermal and optical recovery experiments are performed to ascertain the nature of charge trapping in the device. Additionally, Kelvin-force microscopy measurements are used to evaluate the surface potential within the device. © The Electrochemical Society.

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TYPE Conference YEAR 2013
ScopusOSTI
Results 276–300 of 342
Results 276–300 of 342