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Emerging resistive switching memory technologies: Overview and current status

Proceedings - IEEE International Symposium on Circuits and Systems

Marinella, Matthew J.

Resistive memory technologies, in particular redox random access memory (ReRAM), are poised as one of the most prominent emerging memory categories to replace NAND flash and fill the important need for a Storage Class Memory (SCM). This is due to low switching energy, low current switching, high speed, outstanding endurance, scalability below 10 nm, and excellent back-end-of-line CMOS compatibility. Furthermore, the analog aspects of memristors have opened the door for many novel applications such as analog math accelerators and neuromorphic computers. This paper provides an overview of resistive memory technologies and their current status, with a focus on redox RAM (ReRAM). © 2014 IEEE.

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TYPE Conference YEAR 2014
ScopusOSTIDOI

A comprehensive approach to decipher biological computation to achieve next generation high-performance exascale computing

Howell, Jamie D.; Lohn, Andrew L.; Marinella, Matthew J.; Baca, Michael J.; Finnegan, Patrick S.; Wolfley, Steven L.; Dagel, Daryl D.; Spahn, Olga B.; Harper, Jason C.; Pohl, Kenneth R.; Mickel, Patrick R.

The human brain (volume=1200cm3) consumes 20W and is capable of performing > 10^16 operations/s. Current supercomputer technology has reached 1015 operations/s, yet it requires 1500m^3 and 3MW, giving the brain a 10^12 advantage in operations/s/W/cm^3. Thus, to reach exascale computation, two achievements are required: 1) improved understanding of computation in biological tissue, and 2) a paradigm shift towards neuromorphic computing where hardware circuits mimic properties of neural tissue. To address 1), we will interrogate corticostriatal networks in mouse brain tissue slices, specifically with regard to their frequency filtering capabilities as a function of input stimulus. To address 2), we will instantiate biological computing characteristics such as multi-bit storage into hardware devices with future computational and memory applications. Resistive memory devices will be modeled, designed, and fabricated in the MESA facility in consultation with our internal and external collaborators.

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TYPE SAND Report YEAR 2013
OSTIDOI
Results 226–250 of 342
Results 226–250 of 342