Direct Comparison of Charge Collection from Single-Photon and Two-Photon Laser Testing Techniques
IEEE Transactions on Nuclear Science
Abstract not provided.
Publications
Effects of moisture on radiation-induced degradation in CMOS SOI transistors
IEEE Transactions on Nuclear Science
The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μSOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (e.g., thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to enhanced radiation-induced degradation. © 2010 IEEE.
Radiation-hardened distributed power systems
Abstract not provided.
Direct comparison of charge collection from single-photon and two-photon laser testing techniques
The amounts of charge collection by single-photon absorption to that by two-photon absorption laser testing techniques have been directly compared using specially made SOI diodes. Details of this comparison are discussed.
Direct comparison of charge collection from single-photon and two-photon laser testing techniques
Abstract not provided.
Hardness assurance test guideline for qualifying devices for use in proton environments
IEEE Transactions on Nuclear Science
Proton-induced singl -event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects. © 2006 IEEE.
Moisture Effects on MOS Devices
Abstract not provided.
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects
Abstract not provided.
A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation
IEEE Transactions on Nuclear Science (RADECS 09 issue)
Abstract not provided.
Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments
IEEE Transactions on Nuclear Science (RADECS 09 issue)
Abstract not provided.
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments Physical Mechanisms and Foundations for Hardness Assurance
Abstract not provided.
Gate-all-around silicon nano-wire transistors fabricated in front end CMOS process
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Post-irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides
IEEE Transactions on Nuclear Science
Abstract not provided.
Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains
IEEE Transactions on Nuclear Science
Abstract not provided.
Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing
IEEE Transactions on Nuclear Science
Abstract not provided.
Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging
IEEE Transactions on Nuclear Science
Abstract not provided.
Radiation Response of NROM-Style SOI Non-Volatile Memory Elements
Abstract not provided.
Proton and Alpha Particle SEU Test Results on a 65nm SRAM Fabricated in IBM's SOI Process
Abstract not provided.
Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments
Abstract not provided.
Effects of moisture exposure on radiation-induced MOS device degradation and its implications for long-term aging
Large and unexpected radiation-induced voltage shifts have been observed for some MOS technologies exposed to moisture. The mechanisms for these large voltage shifts and their implications for long-term aging are discussed.
Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing
Abstract not provided.
Direct Evidence of Secondary Events Induced by High Energy Protons
Abstract not provided.
Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics
IEEE Transactions on Nuclear Science
Abstract not provided.
Total ionizing dose effects in NOR and NAND flash memories
IEEE Transactions on Nuclear Science
We irradiated floating gate (FG) memories with NOR and NAND architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and γ-rays. Two classes of phenomena are responsible for charge loss from programmed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from γ-rays, whereas the use of X-rays results in dose enhancement effects. © 2007 IEEE.
Total dose and SEU hardness assurance qualification issues for microelectronics
Abstract not provided.
Results 51–75 of 127