Identification of nominally nonporous H2physisorbents via graph theory-based descriptors of MOF flexibility
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Journal of Physical Chemistry Letters
An open question in the metal hydride community is whether there are simple, physics-based design rules that dictate the thermodynamic properties of these materials across the variety of structures and chemistry they can exhibit. While black box machine learning-based algorithms can predict these properties with some success, they do not directly provide the basis on which these predictions are made, therefore complicating the a priori design of novel materials exhibiting a desired property value. In this work we demonstrate how feature importance, as identified by a gradient boosting tree regressor, uncovers the strong dependence of the metal hydride equilibrium H2 pressure on a volume-based descriptor that can be computed from just the elemental composition of the intermetallic alloy. Elucidation of this simple structure-property relationship is valid across a range of compositions, metal substitutions, and structural classes exhibited by intermetallic hydrides. This permits rational targeting of novel intermetallics for high-pressure hydrogen storage (low-stability hydrides) by their descriptor values, and we predict a known intermetallic to form a low-stability hydride (as confirmed by density functional theory calculations) that has not yet been experimentally investigated.
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ACS Applied Materials and Interfaces
HKUST-1 or Cu3BTC2 (BTC = 1,3,5-benzenetricarboxylate) is a prototypical metal-organic framework (MOF) that holds a privileged position among MOFs for device applications, as it can be deposited as thin films on various substrates and surfaces. Recently, new potential applications in electronics have emerged for this material when HKUST-1 was demonstrated to become electrically conductive upon infiltration with 7,7,8,8-tetracyanoquinodimethane (TCNQ). However, the factors that control the morphology and reactivity of the thin films are unknown. Here, we present a study of the thin-film growth process on indium tin oxide and amorphous Si prior to infiltration. From the unusual bimodal, non-log-normal distribution of crystal domain sizes, we conclude that the nucleation of new layers of Cu3BTC2 is greatly enhanced by surface defects and thus difficult to control. We then show that these films can react with methanolic TCNQ solutions to form dense films of the coordination polymer Cu(TCNQ). This chemical conversion is accompanied by dramatic changes in surface morphology, from a surface dominated by truncated octahedra to randomly oriented thin platelets. The change in morphology suggests that the chemical reaction occurs in the liquid phase and is independent of the starting surface morphology. The chemical transformation is accompanied by 10 orders of magnitude change in electrical conductivity, from <10-11 S/cm for the parent Cu3BTC2 material to 10-1 S/cm for the resulting Cu(TCNQ) film. The conversion of Cu3BTC2 films, which can be grown and patterned on a variety of (nonplanar) substrates, to Cu(TCNQ) opens the door for the facile fabrication of more complex electronic devices.