Publications

Gamble, John K.; Baczewski, Andrew D.; Jacobson, Noah T.; Muller, Richard P.; Nielsen, Erik N.; Harvey-Collard, Patrick H.; Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm

Abstract not provided.

Curry, Matthew J.; England, Troy D.; Rudolph, Martin R.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Carr, Stephen M.; Carroll, Malcolm

Abstract not provided.

Sandia journal manuscript; Not yet accepted for publication

Singh, Meenakshi S.; Pacheco, Jose L.; Perry, Daniel L.; Ten Eyck, Gregory A.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Manginell, Ronald P.; Luhman, Dwight R.; Bielejec, Edward S.; Lilly, Michael L.; Carroll, Malcolm

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Singh, Meenakshi S.; Pacheco, Jose L.; Perry, Daniel L.; Ten Eyck, Gregory A.; Wendt, J.R.; Luhman, Dwight R.; Bielejec, Edward S.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Singh, Meenakshi S.; Pacheco, Jose L.; Perry, Daniel L.; Ten Eyck, Gregory A.; Wendt, J.R.; Luhman, Dwight R.; Bielejec, Edward S.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Abraham, John B.; Sharma, Peter A.; Pacheco, Jose L.; Bielejec, Edward S.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathaniel B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Bielejec, Edward S.; Singh, Meenakshi S.; Pacheco, Jose L.; Jacobson, Noah T.; Gamble, John K.; Nielsen, Erik N.; Muller, Richard P.; Luhman, Dwight R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Pacheco, Jose L.; Bielejec, Edward S.; Singh, Meenakshi S.; Bureau-Oxton, Chloe B.; Jacobson, Noah T.; Gamble, John K.; Nielsen, Erik N.; Muller, Richard P.; Luhman, Dwight R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm

Abstract not provided.

Carroll, Malcolm; Harvey-Collard, Patrick H.

Abstract not provided.

Muller, Richard P.; Baczewski, Andrew D.; Blume-Kohout, Robin J.; Carroll, Malcolm; Gamble, John K.; Gao, Xujiao G.; Jacobson, Noah T.; Montano, Ines M.; Nielsen, Erik N.; Rudinger, Kenneth M.; Witzel, Wayne W.

Abstract not provided.

England, Troy D.; Tracy, Lisa A.; Curry, Matthew L.; Carr, Stephen M.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Tracy, Lisa A.; Luhman, Dwight R.; Witzel, Wayne W.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathaniel B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Gamble, John K.; Baczewski, Andrew D.; Carroll, Malcolm; Harvey-Collard, Patrick H.; Jacobson, Noah T.; Maurer, Leon N.; Montano, Ines M.; Muller, Richard P.; Nielsen, Erik N.; Rudolph, Martin R.

Abstract not provided.

Jacobson, Noah T.; Baczewski, Andrew D.; Gamble, John K.; Muller, Richard P.; Nielsen, Erik N.; Rudolph, Martin R.; Harvey-Collard, Patrick H.; Carroll, Malcolm

Abstract not provided.

Bielejec, Edward S.; Pacheco, Jose L.; Singh, Meenakshi S.; Jacobson, Noah T.; Gamble, John K.; Luhman, Dwight R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Luhman, Dwight R.; Tracy, Lisa A.; Witzel, Wayne W.; Carr, Stephen M.; Borchardt, John J.; Bishop, Nathan C.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Luhman, Dwight R.; Tracy, Lisa A.; Witzel, Wayne W.; Carr, Stephen M.; Borchardt, John J.; Biship, Nathan B.; Ten Eyck, Gregory A.; Pluym, Tammy P.; Wendt, J.R.; Blume-Kohout, Robin J.; Nielsen, Erik N.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Nanotechnology

Shirkhorshidian, A.; Bishop, N.C.; Dominguez, Jason J.; Grubbs, R.K.; Wendt, J.R.; Lilly, M.P.; Carroll, Malcolm

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source-drain voltage and non-linear dependence on gate bias. Effects such as Fowler-Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15-20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.

Carroll, Malcolm; Rochette, Sophie R.

Abstract not provided.

Carroll, Malcolm; Rochette, Sophie R.; Pioro-Ladriere, Michel P.; Ten Eyck, Gregory A.; Pluym, Tammy P.

Abstract not provided.

Carroll, Malcolm; Harvey-Collard, Patrick H.

Abstract not provided.