Publications

The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention--the solid-state transistor. It has become clear that the conventional transistor technology is approaching its limitations. Recent years have seen the advent of magnetoelectronics and spintronics with combined magnetism and solid state electronics via spin-dependent transport process. In these novel devices, both charge and spin degree freedoms can be manipulated by external means. This leads to novel electronic functionalities that will greatly enhance the speed of information processing and memory storage density. The challenge lying ahead is to understand the new device physics, and control magnetic phenomena at nanometer length scales and in reduced dimensions. To meet this goal, we proposed the silicon nanocrystal system, because: (1) It is compatible with existing silicon fabrication technologies; (2) It has shown strong quantum confinement effects, which can modify the electric and optical properties through directly modifying the band structure; and (3) the spin-orbital coupling in silicon is very small, and for isotopic pure {sup 28}Si, the nuclear spin is zero. These will help to reduce the spin-decoherence channels. In the past fiscal year, we have studied the growth mechanism of silicon-nanocrystals embedded in silicon dioxide, their photoluminescence properties, and the Si-nanocrystal's magnetic properties in the presence of Mn-ion doping. Our results may demonstrate the first evidence of possible ferromagnetic orders in Mn-ion implanted silicon nanocrystals, which can lead to ultra-fast information process and ultra-dense magnetic memory applications.

Abstract not provided.

The stress evolution during electrodeposition of NiMn from a sulfamate-based bath was investigated as a function of Mn concentration and current density. The NiMn stress evolution with film thickness exhibited an initial high transitional stress region followed by a region of steady-state stress with a magnitude that depended on deposition rate, similar to the previously reported stress evolution in electrodeposited Ni [S. J. Hearne and J. A. Floro, J. Appl. Phys. 97, 014901-1 (2005)]. The incorporation of increasing amounts of Mn resulted in a linear increase in the steady-state stress at constant current density. However, no significant changes in the texture or grain size were observed, which indicates that an atomistic process is driving the changes in steady-state stress. Additionally, microstrain measured by ex situ x-ray diffraction increased with increasing Mn content, which was likely the result of localized lattice distortions associated with substitutional incorporation of Mn and/or increased twin density.

Abstract not provided.

Abstract not provided.