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MilliKelvin HEMT Amplifiers for Low Noise High Bandwidth Measurement of Quantum Devices

Tracy, Lisa A.; Reno, J.L.; Hargett, Terry H.; Fallahi, Saeed F.; Manfra, Michael J.

We demonstrate ultra-low power cryogenic high electron mobility transistor (HEMT) amplifiers for measurement of quantum devices. The low power consumption (few uWs) allows the amplifier to be located near the device, at the coldest cryostat stage (typically less than 100 mK). Such placement minimizes parasitic capacitance and reduces the impact of environmental noise (e.g. triboelectric noise in cabling), allowing for improvements in measurement gain, bandwidth and noise. We use custom high electron mobility transistors (HEMTs) in GaAs/A1GaAs heterostructures. These HEMTs are known to have excellent performance specifically at mK temperatures, with electron mobilities that can exceed 10 6 cm 2 /Vs, allowing for large gain with low power consumption. Low temperature measurements of custom HEMT amplifiers at T = 4 K show a current sensitivity of 50 pA at 1 MHz bandwidth for 5 mW power dissipation, which is an improvement upon performance of amplifiers using off-the-shelf HEMTs.

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TYPE SAND Report YEAR 2018
OSTIDOI

Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole

Physical Review Letters

Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy S.; Tracy, Lisa A.; Reno, J.L.; Hargett, Terry H.

We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B=0 and high modulation frequencies, we observe photon-assisted tunneling between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip interdot tunneling channel, introducing a distinct interference pattern at finite B. Magnetotransport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin conserving and spin flip, which form closed loops at critical magnetic fields. In one such loop, an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

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TYPE Journal Article YEAR 2018
ScopusOSTIDOI

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

Scientific Reports

Lu, Tzu-Ming L.; Tracy, Lisa A.; Laroche, D.; Huang, S.H.; Chuang, Y.; Su, Y.H.; Li, J.Y.; Liu, C.W.

Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 1010 cm-2, this ratio grows greater than 1, resulting in a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.

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TYPE Journal Article YEAR 2017
ScopusOSTIDOI
Results 51–75 of 133
Results 51–75 of 133