Low-Energy Electron Microscopy (LEEM) Studiesof TiO2(B) Nanosheets Deposited by Langmuir--Blodgett Technique
Abstract not provided.
Publications
WBG Workshop Out Brief
Abstract not provided.
Gas permeability of graphene oxide membranes
Abstract not provided.
The Role of Barrier Structure in Current Collapse of AlGaN/GaN High Electron Mobility Transistors with Thick AlGaN Barriers
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Langmuir-Blodgett Assembly of Graphitic Membranes
Abstract not provided.
The Role of Barrier Structure in Current Collapse of AlGaN/GaN High Electron Mobility Transistors with Thick AlGaN Barriers
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Postdoctoral program guidelines
We, the Postdoc Professional Development Program (PD2P) leadership team, wrote these postdoc guidelines to be a starting point for communication between new postdocs, their staff mentors, and their managers. These guidelines detail expectations and responsibilities of the three parties, as well as list relevant contacts. The purpose of the Postdoc Program is to bring in talented, creative people who enrich Sandia's environment by performing innovative R&D, as well as by stimulating intellectual curiosity and learning. Postdocs are temporary employees who come to Sandia for career development and advancement reasons. In general, the postdoc term is 1 year, renewable up to five times for a total of six years. However, center practices may vary; check with your manager. At term, a postdoc may apply for a staff position at Sandia or choose to move to university, industry or another lab. It is our vision that those who leave become long-term collaborators and advocates whose relationships with Sandia have a positive effect upon our national constituency.
Enabling graphene nanoelectronics
Recent work has shown that graphene, a 2D electronic material amenable to the planar semiconductor fabrication processing, possesses tunable electronic material properties potentially far superior to metals and other standard semiconductors. Despite its phenomenal electronic properties, focused research is still required to develop techniques for depositing and synthesizing graphene over large areas, thereby enabling the reproducible mass-fabrication of graphene-based devices. To address these issues, we combined an array of growth approaches and characterization resources to investigate several innovative and synergistic approaches for the synthesis of high quality graphene films on technologically relevant substrate (SiC and metals). Our work focused on developing the fundamental scientific understanding necessary to generate large-area graphene films that exhibit highly uniform electronic properties and record carrier mobility, as well as developing techniques to transfer graphene onto other substrates.
Electrostatic Transfer of Epitaxial Graphene
Abstract not provided.
Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene
Abstract not provided.
Enabling Graphene Nanoelectronics
Abstract not provided.
Characterization and Comparison of Devices Fabricated From Epitaxial Graphene on SiC and Electrostatically Transferred Graphene
Abstract not provided.
Electrostatic transfer of epitaxial graphene to glass
We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environment [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.
Characterization of devices fabricated from electrostatically transferred graphene: comparison with epitaxial based devices
Abstract not provided.
Theory and measurement of casimir forces
Abstract not provided.
Growth Mode and Substrate Symmetry Dependent Strain in Epitaxial Graphene
Not submitted at this time
Abstract not provided.
Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass
New Journal of Physiscs
Abstract not provided.
Vibrational spectra of nanowires measured using laser doppler vibrometry and STM studies of epitaxial graphene : an LDRD fellowship report
A few of the many applications for nanowires are high-aspect ratio conductive atomic force microscope (AFM) cantilever tips, force and mass sensors, and high-frequency resonators. Reliable estimates for the elastic modulus of nanowires and the quality factor of their oscillations are of interest to help enable these applications. Furthermore, a real-time, non-destructive technique to measure the vibrational spectra of nanowires will help enable sensor applications based on nanowires and the use of nanowires as AFM cantilevers (rather than as tips for AFM cantilevers). Laser Doppler vibrometry is used to measure the vibration spectra of individual cantilevered nanowires, specifically multiwalled carbon nanotubes (MWNTs) and silver gallium nanoneedles. Since the entire vibration spectrum is measured with high frequency resolution (100 Hz for a 10 MHz frequency scan), the resonant frequencies and quality factors of the nanowires are accurately determined. Using Euler-Bernoulli beam theory, the elastic modulus and spring constant can be calculated from the resonance frequencies of the oscillation spectrum and the dimensions of the nanowires, which are obtained from parallel SEM studies. Because the diameters of the nanowires studied are smaller than the wavelength of the vibrometer's laser, Mie scattering is used to estimate the lower diameter limit for nanowires whose vibration can be measured in this way. The techniques developed in this thesis can be used to measure the vibrational spectra of any suspended nanowire with high frequency resolution Two different nanowires were measured - MWNTs and Ag{sub 2}Ga nanoneedles. Measurements of the thermal vibration spectra of MWNTs under ambient conditions showed that the elastic modulus, E, of plasma-enhanced chemical vapor deposition (PECVD) MWNTs is 37 {+-} 26 GPa, well within the range of E previously reported for CVD-grown MWNTs. Since the Ag{sub 2}Ga nanoneedles have a greater optical scattering efficiency than MWNTs, their vibration spectra was more extensively studied. The thermal vibration spectra of Ag{sub 2}Ga nanoneedles was measured under both ambient and low-vacuum conditions. The operational deflection shapes of the vibrating Ag{sub 2}Ga nanoneedles was also measured, allowing confirmation of the eigenmodes of vibration. The modulus of the crystalline nanoneedles was 84.3 {+-} 1.0 GPa. Gas damping is the dominate mechanism of energy loss for nanowires oscillating under ambient conditions. The measured quality factors, Q, of oscillation are in line with theoretical predictions of air damping in the free molecular gas damping regime. In the free molecular regime, Q{sub gas} is linearly proportional to the density and diameter of the nanowire and inversely proportional to the air pressure. Since the density of the Ag{sub 2}Ga nanoneedles is three times that of the MWNTs, the Ag{sub 2}Ga nanoneedles have greater Q at atmospheric pressures. Our initial measurements of Q for Ag{sub 2}Ga nanoneedles in low-vacuum (10 Torr) suggest that the intrinsic Q of these nanoneedles may be on the order of 1000. The epitaxial carbon that grows after heating (000{bar 1}) silicon carbide (SiC) to high temperatures (1450-1600) in vacuum was also studied. At these high temperatures, the surface Si atoms sublime and the remaining C atoms reconstruct to form graphene. X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moire superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic scale resolution, considerable insight into the growth mechanisms of FLG on the carbon-face of SiC is obtained.
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