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Ihlefeld, Jon I. ; Medlin, Douglas L. ; Brown-Shaklee, Harlan J.
Ihlefeld, Jon I.
Sharma, Peter A. ; Ihlefeld, Jon I.
Acta Materialia
Ihlefeld, Jon I.
Brennecka, Geoffrey L. ; Ihlefeld, Jon I. ; Meyer, Kelsey M. ; Small, Leo J.
Ihlefeld, Jon I. ; Meyer, Kelsey M. ; Brown-Shaklee, Harlan J. ; Kotula, Paul G. ; Lu, Ping L. ; McKenzie, Bonnie B. ; Allen, Amy A. ; Rye, Michael J. ; Brennecka, Geoffrey L. ; Gough, Dara G. ; Spoerke, Erik D.
Ihlefeld, Jon I. ; Brown-Shaklee, Harlan J. ; Medlin, Douglas L. ; Clem, Paul G. ; McKenzie, Bonnie B.
Brumbach, Michael T. ; Ihlefeld, Jon I. ; Atcitty, Stanley A.
Ihlefeld, Jon I. ; Dominguez, Jason J. ; Bower, John E. ; Burckel, David B. ; Sinclair, Michael B. ; Brener, Igal B.
Brener, Igal B. ; Bender, Daniel A. ; Wendt, J.R. ; Ihlefeld, Jon I. ; Clem, Paul G. ; Wright, Jeremy B. ; Sinclair, Michael B.
Beechem, Thomas E. ; Medlin, Douglas L. ; Hattar, Khalid M. ; Piekos, Edward S. ; Ihlefeld, Jon I.
Heinrichs, Todd D. ; Ihlefeld, Jon I.
Heinrichs, Todd D. ; Ihlefeld, Jon I.
Journal of Applied Physics
Ihlefeld, Jon I. ; Brennecka, Geoffrey L. ; Kotula, Paul G.
Ihlefeld, Jon I. ; Brown-Shaklee, Harlan J. ; Sharma, Peter A. ; Clem, Paul G. ; Medlin, Douglas L.
Brennecka, Geoffrey L. ; Ihlefeld, Jon I.
Liu, Sheng L. ; Dominguez, Jason J. ; Bower, John E. ; Sinclair, Michael B. ; Ihlefeld, Jon I. ; Burckel, David B. ; Brener, Igal B.
Liu, Sheng L. ; Sinclair, Michael B. ; Brener, Igal B. ; Jun, Young C. ; Bender, Daniel A. ; Wendt, J.R. ; Ihlefeld, Jon I. ; Clem, Paul G. ; Wright, Jeremy B.
Ihlefeld, Jon I. ; Kotula, Paul G. ; Lu, Ping L. ; McKenzie, Bonnie B. ; Rye, Michael J. ; Brennecka, Geoffrey L. ; Gough, Dara G. ; Spoerke, Erik D.
Ihlefeld, Jon I.
Ihlefeld, Jon I. ; Brennecka, Geoffrey L. ; Small, Leo J. ; Apblett, Christopher A.
Applied Physics Letters
Ihlefeld, Jon I. ; Brumbach, Michael T. ; Atcitty, Stanley A.
La2O3 films were prepared on (0001)-oriented GaN substrates via reactive molecular-beam epitaxy. Film orientation and phase were assessed using reflection high-energy electron and X-ray diffraction. Films were observed to grow as predominantly hexagonal La2O3 for thicknesses less than 10 nm while film thickness greater than 10 nm favored mixed cubic and hexagonal symmetries. Band offsets were characterized by X-ray photoelectron spectroscopy on hexagonally symmetric films and valence band offsets of 0.63 ± 0.04 eV at the La2O3/GaN interface were measured. A conduction band offset of approximately 1.5 eV could be inferred from the measured valence band offset.
Ihlefeld, Jon I. ; Clem, Paul G. ; Brown-Shaklee, Harlan J. ; Medlin, Douglas L.
Sharma, Peter A. ; Blea-Kirby, Mia A. ; McKenzie, Bonnie B. ; Edney, Cynthia E. ; Nishimoto, Ryan K. ; Ihlefeld, Jon I.
Brown-Shaklee, Harlan J. ; Ihlefeld, Jon I.
Ihlefeld, Jon I. ; Brown-Shaklee, Harlan J. ; Medlin, Douglas L.
Applied Physics Letters
Liu, Sheng L. ; Dominguez, Jason J. ; Bower, John E. ; Sinclair, Michael B. ; Ihlefeld, Jon I. ; Burckel, David B. ; Brener, Igal B.
Proposed for publication in Journal of the Electrochemical Society.
Brennecka, Geoffrey L. ; Brumbach, Michael T. ; Apblett, Christopher A. ; Ihlefeld, Jon I. ; Small, Leo J.
Proposed for publication in Journal of Applied Physics.
Brennecka, Geoffrey L. ; Ihlefeld, Jon I. ; Small, Leo J. ; Apblett, Christopher A.
Proposed for publication in Physical Review Letters.
Beechem, Thomas E. ; Hattar, Khalid M. ; Ihlefeld, Jon I. ; Medlin, Douglas L. ; Rodriguez, Marko A. ; Piekos, Edward S.
Ihlefeld, Jon I. ; Kotula, Paul G. ; Brennecka, Geoffrey L. ; Gough, Dara G. ; Spoerke, Erik D. ; Lu, Ping L. ; McKenzie, Bonnie B. ; Rye, Michael J.
Ihlefeld, Jon I. ; Kotula, Paul G. ; Brennecka, Geoffrey L. ; Gough, Dara G. ; Spoerke, Erik D.
Ihlefeld, Jon I.
Ihlefeld, Jon I.
Ihlefeld, Jon I. ; Brennecka, Geoffrey L.
Proposed for publication in Journal of the American Ceramic Society.
Ihlefeld, Jon I. ; Brown-Shaklee, Harlan J. ; Rodriguez, Marko A. ; Clem, Paul G.
Ihlefeld, Jon I. ; Brown-Shaklee, Harlan J.
Ihlefeld, Jon I. ; McKenzie, Bonnie B.
Liu, Sheng L. ; Sinclair, Michael B. ; Jun, Young C. ; Bender, Daniel A. ; Wright, Jeremy B. ; Wendt, J.R. ; Ihlefeld, Jon I. ; Clem, Paul G.
Proposed for publication in Journal of Applied Physics.
Ihlefeld, Jon I. ; Brennecka, Geoffrey L.
Zavadil, Kevin R. ; Spoerke, Erik D. ; Delnick, Frank M. ; Anderson, Travis M. ; Apblett, Christopher A. ; Cygan, Randall T. ; Ihlefeld, Jon I.
Proposed for publication in Nano Letters.
Ihlefeld, Jon I.
Graham, Joseph G. ; Small, Leo J. ; Ihlefeld, Jon I. ; Brennecka, Geoffrey L. ; Kotula, Paul G.
Small, Leo J. ; Apblett, Christopher A. ; Brennecka, Geoffrey L. ; Ihlefeld, Jon I.
Ihlefeld, Jon I. ; Brennecka, Geoffrey L. ; Apblett, Christopher A. ; Small, Leo J. ; Graham, Joseph G.
Ihlefeld, Jon I. ; Kotula, Paul G. ; Gough, Dara G. ; Lu, Ping L. ; Spoerke, Erik D. ; McKenzie, Bonnie B. ; Rye, Michael J. ; Brennecka, Geoffrey L.
Ihlefeld, Jon I. ; Kotula, Paul G. ; Brennecka, Geoffrey L. ; McKenzie, Bonnie B. ; Rye, Michael J. ; Meyer, Kelsey M.
Liu, Sheng L. ; Basilio, Lorena I. ; Warne, Larry K. ; Ihlefeld, Jon I. ; Clem, Paul G. ; Sinclair, Michael B. ; Brener, Igal B. ; Mahony, Thomas S. ; Bender, Daniel A. ; Bower, John E. ; Wright, Jeremy B. ; Peters, D.W. ; Wendt, J.R.
Liu, Sheng L. ; Mahony, Thomas S. ; Bender, Daniel A. ; Wright, Jeremy B. ; Wendt, J.R. ; Ihlefeld, Jon I. ; Clem, Paul G. ; Sinclair, Michael B.
Brennecka, Geoffrey L. ; Ihlefeld, Jon I. ; George, Matthew C.
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