Improved validation for models of complex systems has been a primary focus over the past year for the Resilience in Complex Systems Research Challenge. This document describes a set of research directions that are the result of distilling those ideas into three categories of research -- epistemic uncertainty, strong tests, and value of information. The content of this document can be used to transmit valuable information to future research activities, update the Resilience in Complex Systems Research Challenge's roadmap, inform the upcoming FY18 Laboratory Directed Research and Development (LDRD) call and research proposals, and facilitate collaborations between Sandia and external organizations. The recommended research directions can provide topics for collaborative research, development of proposals, workshops, and other opportunities.
Wide band gap semiconductors like AlN typically cannot be efficiently p-doped: acceptor levels are far from the valence band-edge, preventing holes from activating. This means that pn-junctions cannot be created, and the semiconductor is less useful, a particular problem for deep Ultraviolet (UV) optoelectronics.
This report contains the written footprint of a Sandia-hosted workshop held in Albuquerque, New Mexico, June 22-23, 2016 on “Complex Systems Models and Their Applications: Towards a New Science of Verification, Validation and Uncertainty Quantification,” as well as of pre-work that fed into the workshop. The workshop’s intent was to explore and begin articulating research opportunities at the intersection between two important Sandia communities: the complex systems (CS) modeling community, and the verification, validation and uncertainty quantification (VVUQ) community The overarching research opportunity (and challenge) that we ultimately hope to address is: how can we quantify the credibility of knowledge gained from complex systems models, knowledge that is often incomplete and interim, but will nonetheless be used, sometimes in real-time, by decision makers?
III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solid-state lighting. (Figure presented.) .
Light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solidstate lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated to be: expanded chromaticity range and control; higher efficiency at higher current densities; improvements in reliability; intelligent control of chromaticity and intensity; and decreased cost of light. In the long-term, additional improvements may be driven directly by SSL for plants, the most important of which can be anticipated to be: even further expanded chromaticity range and control; and control over the light intensity distribution in space and time. One can even anticipate that plants and artificial lighting (as well as other aspects of a plant's environment) will ultimately coevolve, with plants evolving to thrive in artificial lighting environments, and artificial lighting environments evolving to best serve plants.
Research, the manufacture of knowledge, is currently practiced largely as an “art,” not a “science.” Just as science (understanding) and technology (tools) have revolutionized the manufacture of other goods and services, it is natural, perhaps inevitable, that they will ultimately also be applied to the manufacture of knowledge. In this article, we present an emerging perspective on opportunities for such application, at three different levels of the research enterprise. At the cognitive science level of the individual researcher, opportunities include: overcoming idea fixation and sloppy thinking, and balancing divergent and convergent thinking. At the social network level of the research team, opportunities include: overcoming strong links and groupthink, and optimally distributing divergent and convergent thinking between individuals and teams. At the research ecosystem level of the research institution and the larger national and international community of researchers, opportunities include: overcoming performance fixation, overcoming narrow measures of research impact, and overcoming (or harnessing) existential/social stress.
Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. At pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.
The verdict is in: the methods of science can significantly enhance the effectiveness of creative teams. Just ask employers like Google and Facebook who are applying ideas from the social sciences to improve the performance of their organizations.1 Over the last few decades, social scientists, including psychologists, sociologists and anthropologists, have made important strides in developing a scientific understanding of how creative individuals and creative communities operate.
The authors, Jeffrey Y. Tsao, Jung Han, Roland H. Haitz, and P. Morgan Pattison, on behalf of a large and growing community of scientists and technologists working in III-N semiconductor materials, physics and devices, and of users of the applications they enable congratulate Professors Akasaki, Amano and Nakamura (AAN). The path that connects scientific understanding with tools and technologies is rarely linear. Prevailing scientific understanding often enables and unleashes new tools and technologies. But prevailing scientific understanding is imperfect, and technology researchers must often step, as did AAN, outside its confines for their breakthroughs. the importance of technology breakthroughs is particularly evident in semiconductors: in recent decades, more and more Physics Nobel Prizes have been awarded for technology breakthroughs, and of these by far the most have been for semiconductors.
III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.
We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth less than ∼1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately the self-limiting etch kinetics lead to an ensemble of nanoparticles. This change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.