The Effect of Neutron Energy on Single Event Upsets and Multiple Bit Upsets
Abstract not provided.
Publications
Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs
Abstract not provided.
Radiation Effects in 3D Integrated SOI SRAM Circuits
Abstract not provided.
Dosimetry experiments at the MEDUSA Facility (Little Mountain)
A series of experiments on the MEDUSA linear accelerator radiation test facility were performed to evaluate the difference in dose measured using different methods. Significant differences in dosimeter-measured radiation dose were observed for the different dosimeter types for the same radiation environments, and the results are compared and discussed in this report.
Challenges in radiation effects on CMOS and power electronics
Abstract not provided.
Direct Comparison of Charge Collection from Single-Photon and Two-Photon Laser Testing Techniques
IEEE Transactions on Nuclear Science
Abstract not provided.
Effects of moisture on radiation-induced degradation in CMOS SOI transistors
IEEE Transactions on Nuclear Science
The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μSOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (e.g., thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to enhanced radiation-induced degradation. © 2010 IEEE.
Charge Collection in Power MOSFETs for SEB Characterisation--Evidence of Energy Effects
IEEE Transactions on Nuclear Science, Dec. 2010
Abstract not provided.
Radiation-hardened distributed power systems
Abstract not provided.
Direct comparison of charge collection from single-photon and two-photon laser testing techniques
The amounts of charge collection by single-photon absorption to that by two-photon absorption laser testing techniques have been directly compared using specially made SOI diodes. Details of this comparison are discussed.
Direct comparison of charge collection from single-photon and two-photon laser testing techniques
Abstract not provided.
Hardness assurance test guideline for qualifying devices for use in proton environments
IEEE Transactions on Nuclear Science
Proton-induced singl -event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects. © 2006 IEEE.
Moisture Effects on MOS Devices
Abstract not provided.
Analysis of proton and heavy-ion irradiation effects on phase change memories with MOSFET and BJT selectors
IEEE Transactions on Nuclear Science
We study proton and heavy ion irradiation effects on Phase Change Memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation. © 2006 IEEE.
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects
Abstract not provided.
A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation
IEEE Transactions on Nuclear Science (RADECS 09 issue)
Abstract not provided.
Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments
IEEE Transactions on Nuclear Science (RADECS 09 issue)
Abstract not provided.
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments Physical Mechanisms and Foundations for Hardness Assurance
Abstract not provided.
Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage
IEEE Transactions on Nuclear Science
Abstract not provided.
Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains
IEEE Transactions on Nuclear Science
Abstract not provided.
Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing
IEEE Transactions on Nuclear Science
Abstract not provided.
Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal Memory Cell
IEEE Transactions on Nuclear Science
Abstract not provided.
Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging
IEEE Transactions on Nuclear Science
Abstract not provided.
Proton and Alpha Particle SEU Test Results on a 65nm SRAM Fabricated in IBM's SOI Process
Abstract not provided.
Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments
Abstract not provided.
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