Publications

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Gallium Nitride (GaN) semiconductors have extremely low switching loss, high breakdown voltage, and high junction temperature rating. These characteristics enable improved device performance and thus improved switch mode power converter designs. This paper evaluates the Pareto-optimal performance improvements for a DC generation system with predicted GaN loss characteristics and a rigorous multi-objective optimization based design paradigm. The optimization results show that the application of GaN can achieve a 6.4% mass savings relative to Silicon Carbide (SiC) and 40% mass savings relative to Silicon (Si) at the same loss level for a 10 kW application.

In this work, a novel DC-DC converter topology, an adaptation of the Hybrid Switched Capacitor Circuit (HSCC), is considered for use in high-gain, high voltage applications that also require high efficiency and superior power density. In particular, a bipolar HSCC design is described, and a candidate control methodology is set forth and developed analytically. The converter performance is demonstrated to be consistent with analysis. In addition, the converter is demonstrated to step 460V up to 8.63 kV (gain of 19) at 3.63 kW and nearly 97.0% efficiency.

In order to determine how material characteristics percolate up to system-level improvements in power dissipation for different material systems and device types, we have developed an optimization tool for power diodes. This tool minimizes power dissipation in a diode for a given system operational regime (reverse voltage, forward current density, frequency, duty cycle, and temperature) for a variety of device types and materials. We have carried out diode optimizations for a wide range of system operating points to determine the regimes for which certain power diode materials/devices are favored. In this work, we present results comparing state-of-the-art Si and SiC merged PiN Schottky (MPS) diodes to vertical GaN (v-GaN) PiN diodes and as-yet undeveloped v-GaN Schottky barrier diodes (SBDs). The results of this work show that for all conditions tested, SiC MPS and v-GaN PiN diodes are preferred over Si MPS diodes. v-GaN PiN diodes are preferred over SiC MPS diodes for high-voltage / moderate-frequency operation with the limits of the v-GaN PiN preferred regime, increasing with increasing forward current density. If a v-GaN SBD diode were available, it would be preferred over all other devices at low to moderate voltages, for all frequencies from 100 Hz to 1 MHz.

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With the next generation of semiconductor materials in development, significant strides in the Size, Weight, and Power (SWaP) characteristics of power conversion systems are presently underway. In particular, much of the improvements in system-level efficiencies and power densities due to wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) device incorporation are realized through higher voltage, higher frequency, and higher temperature operation. Concomitantly, there is a demand for ever smaller device footprints with high voltage, high power handling ability while maintaining ultra-low inductive/capacitive parasitics for high frequency operation. For our work, we are developing small size vertical gallium nitride (GaN) and aluminum gallium nitride (AlGaN) power diodes and transistors with breakdown and hold-off voltages as high as 15kV. The small size and high power densities of these devices create stringent requirements on both the size (balanced between larger sizing for increased voltage hold-off with smaller sizing for reduced parasitics) and heat dissipation capabilities of the associated packaging. To accommodate these requirements and to be able to characterize these novel device designs, we have developed specialized packages as well as test hardware and capabilities. This work describes the requirements of these new devices, the development of the high voltage, high power packages, and the high-voltage, high-Temperature test capabilities needed to characterize and use the completed components. In the course of this work, we have settled on a multi-step methodology for assessing the performance of these new power devices, which we also present.

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This work has applied a suite of long-term reliability ATs (accelerated tests) to a variety of MLPE devices (module level power electronics such as microinverters and optimizers) from five different manufacturers. This data set is one of first (only [3] is reported for reliability testing in the literature) as well as the largest experimental set in public literature, both in sample size (5 manufacturers including both DC/DC and DC/AC units and 20 units for each test) as well as number of experiments (6 different experimental test conditions) for MLPE devices. The accelerated stress tests include thermal cycling test per IEC 61215 profile, and damp heat test per IEC 61215 profile and they were performed under powered and unpowered conditions. Included in these experiments are the first independent long-term experimental data regarding damp heat as well as the longest term (>9 month) testing of MLPE units reported in literature for thermal cycling. Additionally, this work is the first to show in situ power measurements as well as periodic efficiency measurements over length of experimental tests, demonstrating whether certain tests result in long-term degradation or immediate catastrophic failures. The result of this testing demonstrates the long-term durability and reliability of MLPE units to several accelerated environmental stressors.

The effects of paralleling low-current vertical Gallium Nitride (v-GaN) diodes in a custom power module are reported. Four paralleled v-GaN diodes were demonstrated to operate in a buck converter at 1.3 Apeak (792 mArms) at 240 V and 15 kHz switching frequency. Additionally, high-fidelity SPICE simulations demonstrate the effects of device parameter variation on power sharing in a power module. The device parameters studied were found to have a sub-linear relationship with power sharing, indicating a relaxed need to bin parts for paralleling. This result is very encouraging for power electronics based on low-current v-GaN and demonstrates its potential for use in high-power systems.

The switching characteristics of vertical Gallium Nitride (v-GaN) diodes grown on GaN substrates are reported. v-GaN diodes were tested in a Double-Pulse Test Circuit (DPTC) and compared to test results for SiC Schottky Barrier Diodes (SBDs) and Si PiN diodes. The reported switching characteristics show that GaN diodes, like SiC SBDs, exhibit nearly negligible reverse recovery current compared to traditional Si PiN diodes. The reverse recovery for the v-GaN PiN diodes is limited by parasitics in the DPTC, precluding extraction of a meaningful recovery time. These results are very encouraging for power electronics based on v-GaN and demonstrate the potential for very fast, low-loss switching for these devices.