Publications

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Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (∼104 - 106cm-2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at Ec-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be Nt = 3 × 1012, 2 × 1015, and 5 × 1014cm-3, respectively. The Ec-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large VBD in the next-generation wide-bandgap power semiconductor devices. Thus, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.

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A photovoltaic (PV) inverter is a balance-of-systems (i.e., every component except for the module component whose purpose is to control and convert power flow through the PV system). Namely, the inverter transforms the nominal DC power produced by the PV module to AC power, which can be transported through the electrical power grid or used on-site by various power-consuming units (Figure 14.1). As the interface between the DC and AC sides of the system, the inverter must meet rather stringent requirements for both.

We have examined ground faults in PhotoVoltaic (PV) arrays and the efficacy of fuse, current detection (RCD), current sense monitoring/relays (CSM), isolation/insulation (Riso) monitoring, and Ground Fault Detection and Isolation (GFID) using simulations based on a Simulation Program with Integrated Circuit Emphasis SPICE ground fault circuit model, experimental ground faults installed on real arrays, and theoretical equations.

PV faults have caused rooftop fires in the U.S., Europe, and elsewhere in the world. One prominent cause of past electrical fires was the ground fault detection blind spot in fuse-based protection systems uncovered by the Solar America Board for Codes and Standards (SolarABCs) steering committee in 2011. Fortunately, a number of alternatives to ground fault fuses have been identified, but there has been limited adoption and historical use of these technologies in the United States. This paper investigates the efficacy of one of these devices known as isolation monitoring (or isolation resistance monitoring, Riso) in small (∼3kW) and large (∼700 kW) arrays. Unfaulted and faulted PV arrays were monitored with Riso technology and compared to SPICE simulations to recommend appropriate thresholds to the maximize the range of ground faults which could be detected while minimizing unwanted tripping. Based on analytical and computational models, it is impossible to determine a trip threshold that provides fire safety and negates unwanted tripping issues. This paper mathematically demonstrates that appropriate Riso trip thresholds must be determined on an arrayby- array basis with sufficient leeway by system operators to adjust trip threshold settings for their particular usage cases.

In order to identify reliability issues associated with advanced inverter operation and array states (e.g. volt-VAR control, high DC/AC ratios), we have collected system and component-level electro-thermal information in a controlled laboratory environment under both nominal and advanced functionality operating conditions. The results of advanced functionality operation indicated increased thermal and electrical stress on components, which will have a negative effect on inverter reliability as these functionalities are exercised more frequently in the future.

The continued exponential growth of photovoltaic technologies paves a path to a solar-powered world, but requires continued progress toward low-cost, high-reliability, high-performance photovoltaic (PV) systems. High reliability is an essential element in achieving low-cost solar electricity by reducing operation and maintenance (O&M) costs and extending system lifetime and availability, but these attributes are difficult to verify at the time of installation. Utilities, financiers, homeowners, and planners are demanding this information in order to evaluate their financial risk as a prerequisite to large investments. Reliability research and development (R&D) is needed to build market confidence by improving product reliability and by improving predictions of system availability, O&M cost, and lifetime. This project is focused on understanding, predicting, and improving the reliability of PV systems. The two areas being pursued include PV arc-fault and ground fault issues, and inverter reliability.

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A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

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Ground faults in photovoltaic (PV) systems pose a fire and shock hazard. To mitigate these risks, AC-isolated, DC grounded PV systems in the United States use Ground Fault Protection Devices (GFPDs), e.g., fuses, to de-energize the PV system when there is a ground fault. Recently the effectiveness of these protection devices has come under question because multiple fires have started when ground faults went undetected. In order to understand the limitations of fuse-based ground fault protection in PV systems, analytical and numerical simulations of different ground faults were performed. The numerical simulations were conducted with Simulation Program with Integrated Circuit Emphasis (SPICE) using a circuit model of the PV system which included the modules, wiring, switchgear, grounded or ungrounded components, and the inverter. The derivation of the SPICE model and the results of parametric fault current studies are provided with varying array topologies, fuse sizes, and fault impedances. Closed-form analytical approximations for GFPD currents from faults to the grounded current carrying conductor-known as %E2%80%9Cblind spot%E2%80%9D ground faults-are derived to provide greater understanding of the influence of array impedances on fault currents. The behavior of the array during various ground faults is studied for a range of ground fault fuse sizes to determine if reducing the size of the fuse improves ground fault detection sensitivity. The results of the simulations show that reducing the amperage rating of the protective fuse does increase fault current detection sensitivity without increasing the likelihood of nuisance trips to a degree. Unfortunately, this benefit reaches a limit as fuses become smaller and their internal resistance increases to the point of becoming a major element in the fault current circuit.

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