Publications

Ten Eyck, Gregory A.; Bishop, Nathaniel B.; Childs, Kenton D.; Wendt, J.R.; Stevens, Jeffrey S.; Grubbs, Robert K.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Wendt, J.R.; Brener, Igal B.; Sinclair, Michael B.

Abstract not provided.

Ihlefeld, Jon I.; Brener, Igal B.; Clem, Paul G.; Sinclair, Michael B.; Burckel, David B.; Peters, D.W.; Wendt, J.R.; Rodriguez, Marko A.; Kotula, Paul G.; Basilio, Lorena I.; Warne, Larry K.

Abstract not provided.

Vawter, Gregory A.; Wendt, J.R.; Alford, Charles A.; Skogen, Erik J.; Overberg, Mark E.; Peake, Gregory M.; Chow, Weng W.; Yang, Zhenshan Y.

Abstract not provided.

NanoLetters?

Bishop, Nathaniel B.; Lilly, Michael L.; Carroll, Malcolm; Young, Ralph W.; Ten Eyck, Gregory A.; Wendt, J.R.; Bielejec, Edward S.; Tracy, Lisa A.

Abstract not provided.

Shaner, Eric A.; Wendt, J.R.; Brener, Igal B.; Sinclair, Michael B.

Abstract not provided.

Bishop, Nathaniel B.; Young, Ralph W.; Ten Eyck, Gregory A.; Wendt, J.R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Gabbay, Alon; Reno, J.L.; Wendt, J.R.; Gin, Aaron G.; Wanke, Michael W.; Sinclair, Michael B.; Shaner, Eric A.; Peters, D.W.

Abstract not provided.

Ginn, James C.; Clem, Paul G.; Sinclair, Michael B.; Peters, D.W.; Wendt, J.R.; Stevens, Jeffrey S.; Hines, Paul H.; Brener, Igal B.; Basilio, Lorena I.; Warne, Larry K.; Ihlefeld, Jon I.

Abstract not provided.

Optics InfoBase Conference Papers

Passmore, Brandon S.; Anderson, J.; Ten Eyck, Gregory A.; Wendt, J.R.; Brener, Igal B.; Sinclair, M.B.; Shaner, Eric A.

A tandem interferometer system measuring the absolute phase and amplitude of planar split-ring resonators fabricated on a BaF2 substrate with a designed resonance at 10.5 μm is presented. © 2010 Optical Society of America.

Science

Ginn, James C.; Clem, Paul G.; Sinclair, Michael B.; Peters, D.W.; Wendt, J.R.; Stevens, Jeffrey S.; Hines, Paul H.; Brener, Igal B.; Basilio, Lorena I.; Warne, Larry K.; Ihlefeld, Jon I.

Abstract not provided.

Vawter, Gregory A.; Wendt, J.R.; Alford, Charles A.; Skogen, Erik J.; Overberg, Mark E.; Peake, Gregory M.; Chow, Weng W.; Yang, Zhenshan Y.

We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.

Vawter, Gregory A.; Wendt, J.R.; Alford, Charles A.; Skogen, Erik J.; Peake, Gregory M.; Overberg, Mark E.; Chow, Weng W.; Yang, Zhenshan Y.

We present a photonic integrated circuit (PIC) composed of two strongly coupled lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz.

Wendt, J.R.; Ginn, James C.; Brener, Igal B.; Sinclair, Michael B.

Abstract not provided.

Applied Physics Letters

Young, Ralph W.; Stevens, Jeffrey S.; Lilly, Michael L.; Carroll, Malcolm; Ten Eyck, Gregory A.; Childs, Kenton D.; Wendt, J.R.; Grubbs, Robert K.

Abstract not provided.

Vawter, Gregory A.; Skogen, Erik J.; Chow, Weng W.; Overberg, Mark E.; Peake, Gregory M.; Wendt, J.R.

This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring mutual injection locking of composite-cavity lasers for enhanced modulation responses. The program focused on developing a fundamental understanding of the frequency enhancement previously demonstrated for optically injection locked lasers. This was then applied to the development of a theoretical description of strongly coupled laser microsystems. This understanding was validated experimentally with a novel 'photonic lab bench on a chip'.

Lilly, Michael L.; Carroll, Malcolm; Young, Ralph W.; Ten Eyck, Gregory A.; Childs, Kenton D.; Wendt, J.R.; Grubbs, Robert K.

We report low-temperature transport measurements of a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). In contrast to previously reported measurements of DQD's in Si MOS structures, our device has a lateral gate geometry very similar to that used by Petta et al. to demonstrate coherent manipulation of single electron spins. This gate design provides a high degree of tunability, allowing for independent control over individual dot occupation and tunnel barriers, as well as the ability to use nearby constrictions to sense dot charge occupation. Comparison of experimentally extracted capacitances between the dot and nearby gates with electrostatic modeling demonstrates the presence of disorder and the ability to partially compensate for this disorder by adjustment of gate voltages. We experimentally show gate-controlled tuning of the interdot coupling over a wide range of energies, an important step towards potential quantum computing applications.

Bishop, Nathaniel B.; Stevens, Jeffrey S.; Childs, Kenton D.; Ohlhausen, J.A.; Lilly, Michael L.; Carroll, Malcolm; Young, Ralph W.; Bielejec, Edward S.; Ten Eyck, Gregory A.; Wendt, J.R.; Rahman, Rajib R.; Grubbs, Robert K.

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

Passmore, Brandon S.; Wendt, J.R.; Peters, D.W.; Brener, Igal B.; Sinclair, Michael B.; Shaner, Eric A.; Ten Eyck, Gregory A.

Abstract not provided.

Applied Physics B

Brady, Gregory R.; Briggs, R.D.; Wendt, J.R.; Kemme, S.A.; Moehring, David L.; Ellis, A.R.; Stick, Daniel L.; Highstrete, Clark H.; Fortier, Kevin M.; Blain, Matthew G.; Haltli, Raymond A.; Cruz-Cabrera, A.A.

Abstract not provided.

Optics Letters

Boye, Robert B.; Wendt, J.R.; Kellogg, Rick A.; Kemme, S.A.

Abstract not provided.

Burckel, David B.; Ten Eyck, Gregory A.; Sinclair, Michael B.; Wendt, J.R.

Metamaterials form a new class of artificial electromagnetic materials that provides the device designer with the ability to manipulate the flow of electromagnetic energy in ways that are not achievable with naturally occurring materials. However, progress toward practical implementation of metamaterials, particularly at infrared and visible frequencies, has been hampered by a combination of absorptive losses; the narrow band nature of the resonant metamaterial response; and the difficulty in fabricating fully 3-dimensional structures. They describe the progress of a recently initiated program at Sandia National Laboratories directed toward the development of practical 3D metamaterials operating in the thermal infrared. They discuss their analysis of fundamental loss limits for different classes of metamaterials. In addition, they discuss new design approaches that they are pursuing which reduce the reliance on metallic structures in an effort to minimize ohmic losses.

Nature Materials

Wendt, J.R.; Ten Eyck, Gregory A.; Ellis, A.R.; Brener, Igal B.; Sinclair, Michael B.; Ginn, James C.

Abstract not provided.

Burckel, David B.; Ten Eyck, Gregory A.; Wendt, J.R.; Brener, Igal B.; Sinclair, Michael B.

We present a new fabrication technique called Membrane Projection Lithography for the production of three-dimensional metamaterials at infrared wavelengths. Using this technique, multilayer infrared metamaterials that include both in-plane and out-of-plane resonators can be fabricated.

Proceedings of SPIE - The International Society for Optical Engineering

Gin, A.V.; Kemme, S.A.; Boye, Robert B.; Peters, D.W.; Ihlefeld, Jon I.; Briggs, R.D.; Wendt, J.R.; Ellis, A.R.; Marshall, L.H.; Carter, T.R.; Hunker, J.D.; Samora, S.

In this work, we describe the most recent progress towards the device modeling, fabrication, testing and system integration of active resonant subwavelength grating (RSG) devices. Passive RSG devices have been a subject of interest in subwavelength-structured surfaces (SWS) in recent years due to their narrow spectral response and high quality filtering performance. Modulating the bias voltage of interdigitated metal electrodes over an electrooptic thin film material enables the RSG components to act as actively tunable high-speed optical filters. The filter characteristics of the device can be engineered using the geometry of the device grating and underlying materials. Using electron beam lithography and specialized etch techniques, we have fabricated interdigitated metal electrodes on an insulating layer and BaTiO3 thin film on sapphire substrate. With bias voltages of up to 100V, spectral red shifts of several nanometers are measured, as well as significant changes in the reflected and transmitted signal intensities around the 1.55um wavelength. Due to their small size and lack of moving parts, these devices are attractive for high speed spectral sensing applications. We will discuss the most recent device testing results as well as comment on the system integration aspects of this project. © 2010 Copyright SPIE - The International Society for Optical Engineering.