The authors have developed two versions of a flexible fabrication technique known as membrane projection lithography that can produce nearly arbitrary patterns in '212 D' and fully three-dimensional (3D) structures. The authors have applied this new technique to the fabrication of split ring resonator-based metamaterials in the midinfrared. The technique utilizes electron beam lithography for resolution, pattern design flexibility, and alignment. The resulting structures are nearly three orders of magnitude smaller than equivalent microwave structures that were first used to demonstrate a negative index material. The fully 3D structures are highly isotropic and exhibit both electrically and magnetically excited resonances for incident transverse electromagnetic waves.
3-D cubic unit cell arrays containing split ring resonators were fabricated and characterized. The unit cells are {approx}3 orders-of-magnitude smaller than microwave SRR-based metamaterials and exhibit both electrically and magnetically excited resonances for normally incident TEM waves in addition to showing improved isotropic response.
We describe a time-domain spectroscopy system in the thermal infrared used for complete transmission and reflection characterization of metamaterials in amplitude and phase. The system uses a triple-output near-infrared ultrafast fiber laser, phase-locked difference frequency generation and phase-matched electro-optic sampling. We will present measurements of several metamaterials designs.
LDRD Project 139363 supported experiments to quantify the performance characteristics of monolithically integrated Schottky diode + quantum cascade laser (QCL) heterodyne mixers at terahertz (THz) frequencies. These integrated mixers are the first all-semiconductor THz devices to successfully incorporate a rectifying diode directly into the optical waveguide of a QCL, obviating the conventional optical coupling between a THz local oscillator and rectifier in a heterodyne mixer system. This integrated mixer was shown to function as a true heterodyne receiver of an externally received THz signal, a breakthrough which may lead to more widespread acceptance of this new THz technology paradigm. In addition, questions about QCL mode shifting in response to temperature, bias, and external feedback, and to what extent internal frequency locking can improve stability have been answered under this project.
Plasmonic structures open up new opportunities in photonic devices, sometimes offering an alternate method to perform a function and sometimes offering capabilities not possible with standard optics. In this LDRD we successfully demonstrated metal coatings on optical surfaces that do not adversely affect the transmission of those surfaces at the design frequency. This technology could be applied as an RF noise blocking layer across an optical aperture or as a method to apply an electric field to an active electro-optic device without affecting optical performance. We also demonstrated thin optical absorbers using similar patterned surfaces. These infrared optical antennas show promise as a method to improve performance in mercury cadmium telluride detectors. Furthermore, these structures could be coupled with other components to lead to direct rectification of infrared radiation. This possibility leads to a new method for infrared detection and energy harvesting of infrared radiation.
We designed, fabricated and measured the performance of nanoelectromechanical (NEMS) switches. Initial data are reported with one of the switch designs having a measured switching time of 400 ns and an operating voltage of 5 V. The switches operated laterally with unmeasurable leakage current in the 'off' state. Surface micromachining techniques were used to fabricate the switches. All processing was CMOS compatible. A single metal layer, defined by a single mask step, was used as the mechanical switch layer. The details of the modeling, fabrication and testing of the NEMS switches are reported.
There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD) [1], which represented a significant breakthrough in the solid-state field. Although no Si spin qubit has been demonstrated to date, work on Si and SiGe based spin qubits is motivated by the observation that spin decoherence times can be significantly longer than in GaAs. Spin decoherence times in GaAs are in part limited by the random spectral diffusion of the non-zero nuclear spins of the Ga and As that couple to the electron spin through the hyperfine interaction. This effect can be greatly suppressed by using a semiconductor matrix with a near zero nuclear spin background. Near zero nuclear spin backgrounds can be engineered using Si by growing {sup 28}Si enriched epitaxy. In this talk, we will present fabrication details and electrical transport results of an accumulation mode double top gated Si metal insulator semiconductor (MIS) nanostructure, Fig 1 (a) & (b). We will describe how this single electron device structure represent a path towards forming a Si based spin qubit similar in design as that demonstrated in GaAs. Potential advantages of this novel qubit structure relative to previous approaches include the combination of: no doping (i.e., not modulation doped); variable two-dimensional electron gas (2DEG) density; CMOS compatible processes; and relatively small vertical length scales to achieve smaller dots. A primary concern in this structure is defects at the insulator-silicon interface. The Sandia National Laboratories 0.35 {micro}m fab line was used for critical processing steps including formation of the gate oxide to examine the utility of a standard CMOS quality oxide silicon interface for the purpose of fabricating Si qubits. Large area metal oxide silicon (MOS) structures showed a peak mobility of 15,000 cm{sup 2}/V-s at electron densities of {approx}1 x 10{sup 12} cm{sup -2} for an oxide thickness of 10 nm. Defect density measured using standard C-V techniques was found to be greater with decreasing oxide thickness suggesting a device design trade-off between oxide thickness and quantum dot size. The quantum dot structure is completed using electron beam lithography and poly-silicon etch to form the depletion gates, Fig 1 (a). The accumulation gate is added by introducing a second insulating Al{sub 2}O{sub 3} layer, deposited by atomic layer deposition, followed by an Al top gate deposition, Fig. 1 (b). Initial single electron transistor devices using SiO{sub 2} show significant disorder in structures with relatively large critical dimensions of the order of 200-300 nm, Fig 2. This is not uncommon for large silicon structures and has been cited in the literature [2]. Although smaller structures will likely minimize the effect of disorder and well controlled small Si SETs have been demonstrated [3], the design constraints presented by disorder combined with long term concerns about effects of defects on spin decoherence time (e.g., paramagnetic centers) motivates pursuit of a 2nd generation structure that uses a compound semiconductor approach, an epitaxial SiGe barrier as shown in Fig. 2 (c). SiGe may be used as an electron barrier when combined with tensilely strained Si. The introduction of strained-Si into the double top gated device structure, however, represents additional fabrication challenges. Thermal budget is potentially constrained due to concerns related to strain relaxation. Fabrication details related to the introduction of strained silicon on insulator and SiGe barrier formation into the Sandia National Laboratories 0.35 {micro}m fab line will also be presented.
The authors have developed a treatment process to improve the etch resistance of an electron beam lithography resist (ZEP 520A) to allow direct pattern transfer from the resist into a hard mask using plasma etching without a metal lift-off process. When heated to 90 C and exposed for 17 min to a dose of approximately 8 mW/cm{sup 2} at 248 nm, changes occur in the resist that are observable using infrared spectroscopy. These changes increase the etch resistance of ZEP 520A to a CF{sub 4}/O{sub 2} plasma. This article will document the observed changes in the improved etch resistance of the ZEP 520A electron beam resist.
We have investigated the physics of Bloch oscillations (BO) of electrons, engineered in high mobility quantum wells patterned into lateral periodic arrays of nanostructures, i.e. two-dimensional (2D) quantum dot superlattices (QDSLs). A BO occurs when an electron moves out of the Brillouin zone (BZ) in response to a DC electric field, passing back into the BZ on the opposite side. This results in quantum oscillations of the electron--i.e., a high frequency AC current in response to a DC voltage. Thus, engineering a BO will yield continuously electrically tunable high-frequency sources (and detectors) for sensor applications, and be a physics tour-de-force. More than a decade ago, Bloch oscillation (BO) was observed in a quantum well superlattice (QWSL) in short-pulse optical experiments. However, its potential as electrically biased high frequency source and detector so far has not been realized. This is partially due to fast damping of BO in QWSLs. In this project, we have investigated the possibility of improving the stability of BO by fabricating lateral superlattices of periodic coupled nanostructures, such as metal grid, quantum (anti)dots arrays, in high quality GaAs/Al{sub x}Ga{sub 1-x}As heterostructures. In these nanostructures, the lateral quantum confinement has been shown theoretically to suppress the optical-phonon scattering, believed to be the main mechanism for fast damping of BO in QWSLs. Over the last three years, we have made great progress toward demonstrating Bloch oscillations in QDSLs. In the first two years of this project, we studied the negative differential conductance and the Bloch radiation induced edge-magnetoplasmon resonance. Recently, in collaboration with Prof. Kono's group at Rice University, we investigated the time-domain THz magneto-spectroscopy measurements in QDSLs and two-dimensional electron systems. A surprising DC electrical field induced THz phase flip was observed. More measurements are planned to investigate this phenomenon. In addition to their potential device applications, periodic arrays of nanostructures have also exhibited interesting quantum phenomena, such as a possible transition from a quantum Hall ferromagnetic state to a quantum Hall spin glass state. It is our belief that this project has generated and will continue to make important impacts in basic science as well as in novel solid-state, high frequency electronic device applications.
We describe the development of a novel silicon quantum bit (qubit) device architecture that involves using materials that are compatible with a Sandia National Laboratories (SNL) 0.35 mum complementary metal oxide semiconductor (CMOS) process intended to operate at 100 mK. We describe how the qubit structure can be integrated with CMOS electronics, which is believed to have advantages for critical functions like fast single electron electrometry for readout compared to current approaches using radio frequency techniques. Critical materials properties are reviewed and preliminary characterization of the SNL CMOS devices at 4.2 K is presented.
We developed techniques to design higher efficiency diffractive optical elements (DOEs) with large numerical apertures (NA) for quantum computing and quantum information processing. Large NA optics encompass large solid angles and thus have high collection efficiencies. Qubits in ion trap architectures are commonly addressed and read by lasers1. Large-scale ion-trap quantum computing2 will therefore require highly parallel optical interconnects. Qubit readout in these systems requires detecting fluorescence from the nearly isotropic radiation pattern of single ions, so efficient readout requires optical interconnects with high numerical aperture. Diffractive optical element fabrication is relatively mature and utilizes lithography to produce arrays compatible with large-scale ion-trap quantum computer architectures. The primary challenge of DOEs is the loss associated with diffraction efficiency. This is due to requirements for large deflection angles, which leads to extremely small feature sizes in the outer zone of the DOE. If the period of the diffractive is between λ (the free space wavelength) and 10λ, the element functions in the vector regime. DOEs in this regime, particularly between 1.5λ and 4λ, have significant coupling to unwanted diffractive orders, reducing the performance of the lens. Furthermore, the optimal depth of the zones with periods in the vector regime differs from the overall depth of the DOE. We will present results indicating the unique behaviors around the 1.5λ and 4λ periods and methods to improve the DOE performance.
Understanding internal dissipation in resonant mechanical systems at the micro- and nanoscale is of great technological and fundamental interest. Resonant mechanical systems are central to many sensor technologies, and microscale resonators form the basis of a variety of scanning probe microscopies. Furthermore, coupled resonant mechanical systems are of great utility for the study of complex dynamics in systems ranging from biology to electronics to photonics. In this work, we report the detailed experimental study of internal dissipation in micro- and nanomechanical oscillators fabricated from amorphous and crystalline diamond materials, atomistic modeling of dissipation in amorphous, defect-free, and defect-containing crystalline silicon, and experimental work on the properties of one-dimensional and two-dimensional coupled mechanical oscillator arrays. We have identified that internal dissipation in most micro- and nanoscale oscillators is limited by defect relaxation processes, with large differences in the nature of the defects as the local order of the material ranges from amorphous to crystalline. Atomistic simulations also showed a dominant role of defect relaxation processes in controlling internal dissipation. Our studies of one-dimensional and two-dimensional coupled oscillator arrays revealed that it is possible to create mechanical systems that should be ideal for the study of non-linear dynamics and localization.
Sandia National Laboratories and Mytek, LLC have collaborated to develop a monolithically-integrated vertical-cavity surface-emitting laser (VCSEL) assembly with controllable polarization states suitable for use in chip-scale atomic clocks. During the course of this work, a robust technique to provide polarization control was modeled and demonstrated. The technique uses deeply-etched surface gratings oriented at several different rotational angles to provide VCSEL polarization stability. A rigorous coupled-wave analysis (RCWA) model was used to optimize the design for high polarization selectivity and fabrication tolerance. The new approach to VCSEL polarization control may be useful in a number of defense and commercial applications, including chip-scale atomic clocks and other low-power atomic sensors.
The goal of this project is to fabricate a four-state pixelated subwavelength optical device that enables mid-wave infrared (MWIR) or long-wave infrared (LWIR) snapshot polarimetric imaging. The polarization information can help to classify imaged materials and identify objects of interest for numerous remote sensing and military applications. While traditional, sequential polarimetric imaging produces scenes with polarization information through a series of assembled images, snapshot polarimetric imaging collects the spatial distribution of all four Stokes parameters simultaneously. In this way any noise due to scene movement from one frame to the next is eliminated. We fabricated several arrays of subwavelength components for MWIR polarization imaging applications. Each pixel unit of the array consists of four elements. These elements are micropolarizers with three or four different polarizing axis orientations. The fourth element sometimes has a micro birefringent waveplate on the top of one of the micropolarizers. The linear micropolarizers were fabricated by patterning nano-scale metallic grids on a transparent substrate. A large area birefringent waveplate was fabricated by deeply etching a subwavelength structure into a dielectric substrate. The principle of making linear micropolarizers for long wavelengths is based upon strong anisotropic absorption of light in the nano-metallic grid structures. The nano-metallic grid structures are patterned with different orientations; therefore, the micropolarizers have different polarization axes. The birefringent waveplate is a deeply etched dielectric one-dimensional subwavelength grating; therefore two orthogonally polarized waves have different phase delays. Finally, in this project, we investigated the near field and diffractive effects of the subwavelength element apertures upon detection. The fabricated pixelated polarizers had a measured extinction ratios larger than 100:1 for pixel sizes in the order of 15 {micro}m by 15 {micro}m that exceed by 7 times previously reported devices. The fabricated birefringent diffractive waveplates had a total variation of phase delay rms of 9.41 degrees with an average delay of 80.6 degrees across the MWIR spectral region. We found that diffraction effects change the requirement for separation between focal plane arrays (FPA) micropolarizer arrays and birefringent waveplates arrays, originally in the order of hundreds of microns (which are the typical substrate thickness) to a few microns or less. This new requirement leads us to propose new approaches to fabricate these devices.
Polarimetric imaging applications at the 2 to 5 μm or Mid-Wave Infrared (MWIR) range use large pixel-count focal plane arrays (FPA) with small pixel size. This project is centered in designing, fabricating and testing micropolarizers that work in that wavelength regime and intended for that type of FPAs. The micro-polarizers will be used in conjunction with a FPA in snapshot mode and will be in the near field of the imaging device. The pixel pitches for some commercial FPAs are small enough that the finite apertures of the polarizing devices may significantly affect their performance given that their aperture size varies between 3 and 5 waves. We are interested in understanding the effect on extinction ratio due to variations in the edge terminations of a polarizer with a small aperture. Edge terminations are the spaces between the first or last wire with the perimeter of the aperture of the polarizer. While this parameter has negligible effects on a larger polarizer, it will be significant for apertures that are about 3 to 5 waves. We will present data that indicates significant variation in performance due to edge terminations.
Subwavelength diffractive features etched into a substrate lead to form birefringence that can be utilized to produce polarization sensitive elements such as waveplates. Using etched features allows for the development of pixilated devices to be used in conjunction with focal plane arrays in polarimetric imaging systems. Typically, the main drawback from using diffractive devices is their high sensitivity to wavelength. Taking advantage of the dispersion of the form birefringence, diffractive waveplates with good achromatic characteristics can be designed. We will report on diffractive waveplates designed for minimal phase retardation error across the 2-5 micron spectral regime. The required fabrication processes of the sub-wavelength feature sizes will be discussed as well as the achromatic performance and transmission efficiency of final devices. Previous work in this area has produced good results over a subset of this wavelength band, but designing for this extended band is particularly challenging. In addition, the effect of the finite size of the apertures of the pixilated devices is of particular interest since they are designed to be used in conjunction with a detector array. The influence of small aperture sizes will also be investigated.
We report here on an effort to design and fabricate a polarization splitter that utilizes form-birefringence to disperse an input beam as a function of polarization content as well as wavelength spectrum. Our approach is unique in the polarization beam splitting geometry and the potential for tailoring the polarized beams' phase fronts to correct aberrations or add focusing power. A first cut design could be realized with a chirped duty cycle grating at a single etch depth. However, this approach presents a considerable fabrication obstacle since etch depths are a strong function of feature size, or grating period. We fabricated a period of 1.0 micron form-birefringent component, with a nominal depth of 1.7 microns, in GaAs using a CAIBE system with a 2-inch ion beam source diameter. The gas flows, ion energy, and sample temperature were all optimized to yield the desired etch profile.
This diffractive optical element (DOE) LDRD is divided into two tasks. In Task 1, we develop two new DOE technologies: (1) a broad wavelength band effective anti-reflection (AR) structure and (2) a design tool to encode dispersion and polarization information into a unique diffraction pattern. In Task 2, we model, design, and fabricate a subwavelength polarization splitter. The first technology is an anti-reflective (AR) layer that may be etched into the DOE surface. For many wavelengths of interest, transmissive silicon DOEs are ideal. However, a significant portion of light (30% from each surface) is lost due to Fresnel reflection. To address this issue, we investigate a subwavelength, surface relief structure that acts as an effective AR coating. The second DOE component technology in Task 1 is a design tool to determine the optimal DOE surface relief structure that can encode the light's degree of dispersion and polarization into a unique spatial pattern. Many signals of interest have unique spatial, temporal, spectral, and polarization signatures. The ability to disperse the signal into a unique diffraction pattern would result in improved signal detection sensitivity with a simultaneous reduction in false alarm. Task 2 of this LDRD project is to investigate the modeling, design, and fabrication of subwavelength birefringent devices for polarimetric spectral sensing and imaging applications. Polarimetric spectral sensing measures the spectrum of the light and polarization state of light at each wavelength simultaneously. The capability to obtain both polarization and spectral information can help develop target/object signature and identify the target/object for several applications in NP&MC and national security.
We have measured the temperature dependence of mechanical dissipation in tetrahedral amorphous carbon flexural and torsional resonators over the temperature range from 300 to 1023 K. The mechanical dissipation was found to be controlled by defects within the material, and the magnitude and temperature dependence of the dissipation were found to depend on whether flexural or torsional vibrational modes were excited. The defects that were active under flexural stresses have a relatively flat concentration from 0.4 to 0.7 eV with an ever increasing defect concentration up to 1.9 eV. Under shear stresses (torsion), the defect activation energies increase immediately beginning at 0.4 eV, with increasing defect concentration at higher energies.
The goal of this one year LDRD was to improve the overall efficiency of InGaN LEDs by improving the extraction of light from the semiconductor chip. InGaN LEDs are currently the most promising technology for producing high efficiency blue and green semiconductor light emitters. Improving the efficiency of InGaN LEDs will enable a more rapid adoption of semiconductor based lighting. In this LDRD, we proposed to develop photonic structures to improve light extraction from nitride-based light emitting diodes (LEDs). While many advanced device geometries were considered for this work, we focused on the use of a photonic crystal for improved light extraction. Although resonant cavity LEDs and other advanced structures certainly have the potential to improve light extraction, the photonic crystal approach showed the most promise in the early stages of this short program. The photonic crystal (PX)-LED developed here incorporates a two dimensional photonic crystal, or photonic lattice, into a nitride-based LED. The dimensions of the photonic crystal are selected such that there are very few or no optical modes in the plane of the LED ('lateral' modes). This will reduce or eliminate any radiation in the lateral direction so that the majority of the LED radiation will be in vertical modes that escape the semiconductor, which will improve the light-extraction efficiency. PX-LEDs were fabricated using a range of hole diameters and lattice constants and compared to control LEDs without a photonic crystal. The far field patterns from the PX-LEDs were dramatically modified by the presence of the photonic crystal. An increase in LED brightness of 1.75X was observed for light measured into a 40 degree emission cone with a total increase in power of 1.5X for an unencapsulated LED.
Electrical operation of III-Nitride light emitting diodes (LEDs) with photonic crystal structures is demonstrated. Employing photonic crystal structures in III-Nitride LEDs is a method to increase light extraction efficiency and directionality. The photonic crystal is a triangular lattice formed by dry etching into the III-Nitride LED. A range of lattice constants is considered (a {approx} 270-340nm). The III-Nitride LED layers include a tunnel junction providing good lateral current spreading without a semi-absorbing metal current spreader as is typically done in conventional III-Nitride LEDs. These photonic crystal III-Nitride LED structures are unique because they allow for carrier recombination and light generation proximal to the photonic crystal (light extraction area) yet displaced from the absorbing metal contact. The photonic crystal Bragg scatters what would have otherwise been guided modes out of the LED, increasing the extraction efficiency. The far-field light radiation patterns are heavily modified compared to the typical III-Nitride LED's Lambertian output. The photonic crystal affects the light propagation out of the LED surface, and the radiation pattern changes with lattice size. LEDs with photonic crystals are compared to similar III-Nitride LEDs without the photonic crystal in terms of extraction, directionality, and emission spectra.
Nano-electromechanical oscillators (NEMOs), capacitively-coupled radio frequency (RF) MEMS switches incorporating dissipative dielectrics, new processing technologies for tetrahedral amorphous carbon (ta-C) films, and scientific understanding of dissipation mechanisms in small mechanical structures were developed in this project. NEMOs are defined as mechanical oscillators with critical dimensions of 50 nm or less and resonance frequencies approaching 1 GHz. Target applications for these devices include simple, inexpensive clocks in electrical circuits, passive RF electrical filters, or platforms for sensor arrays. Ta-C NEMO arrays were used to demonstrate a novel optomechanical structure that shows remarkable sensitivity to small displacements (better than 160 fm/Hz {sup 1/2}) and suitability as an extremely sensitive accelerometer. The RF MEMS capacitively-coupled switches used ta-C as a dissipative dielectric. The devices showed a unipolar switching response to a unipolar stimulus, indicating the absence of significant dielectric charging, which has historically been the major reliability issue with these switches. This technology is promising for the development of reliable, low-power RF switches. An excimer laser annealing process was developed that permits full in-plane stress relaxation in ta-C films in air under ambient conditions, permitting the application of stress-reduced ta-C films in areas where low thermal budget is required, e.g. MEMS integration with pre-existing CMOS electronics. Studies of mechanical dissipation in micro- and nano-scale ta-C mechanical oscillators at room temperature revealed that mechanical losses are limited by dissipation associated with mechanical relaxation in a broad spectrum of defects with activation energies for mechanical relaxation ranging from 0.35 eV to over 0.55 eV. This work has established a foundation for the creation of devices based on nanomechanical structures, and outstanding critical research areas that need to be addressed for the successful application of these technologies have been identified.