Publications

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Single-mode lasing from top-down fabricated gallium nitride nanowires

IEEE Photonic Society 24th Annual Meeting, PHO 2011

Wright, J.B.; Li, Q.M.; Luk, Ting S.; Brener, Igal B.; Wang, George T.; Westlake, K.R.; Lester, L.F.

We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm 2. © 2011 IEEE.

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TYPE Conference YEAR 2011
ScopusOSTI

Multilayer infrared metamaterial fabrication using membrane projection lithography

Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Wendt, J.R.; Brener, Igal B.; Sinclair, Michael B.

Membrane projection lithography is extended from a single layer fabrication technique to a multilayer process, adding polymeric backfill and planarization after each layer is completed. Unaligned contact lithography is used as a rapid prototyping tool to aid in process development, patterning resist membranes in seconds without requiring long e-beam write times. The fabricated multilayer structures show good resistance to solvent attack from subsequent process steps and demonstrate in-plane and out of plane multilayer metallic inclusions in a dielectric host, which is a critical step in the path to develop bulklike metamaterials at optical frequencies.

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TYPE Journal Article YEAR 2011
OSTIDOI

Mid-infrared amplitude and phase measurement of metamaterials using tandem interferometry

Optics InfoBase Conference Papers

Passmore, Brandon S.; Anderson, J.; Ten Eyck, Gregory A.; Wendt, J.R.; Brener, Igal B.; Sinclair, M.B.; Shaner, Eric A.

A tandem interferometer system measuring the absolute phase and amplitude of planar split-ring resonators fabricated on a BaF2 substrate with a designed resonance at 10.5 μm is presented. © 2010 Optical Society of America.

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TYPE Conference YEAR 2010
ScopusOSTI

Active infrared materials for beam steering

Shaner, Eric A.; Brener, Igal B.; Gin, Aaron G.; Reno, J.L.; Barrick, Todd A.

The mid-infrared (mid-IR, 3 {micro}m -12 {micro}m) is a highly desirable spectral range for imaging and environmental sensing. We propose to develop a new class of mid-IR devices, based on plasmonic and metamaterial concepts, that are dynamically controlled by tunable semiconductor plasma resonances. It is well known that any material resonance (phonons, excitons, electron plasma) impacts dielectric properties; our primary challenge is to implement the tuning of a semiconductor plasma resonance with a voltage bias. We have demonstrated passive tuning of both plasmonic and metamaterial structures in the mid-IR using semiconductors plasmas. In the mid-IR, semiconductor carrier densities on the order of 5E17cm{sup -3} to 2E18cm{sup -3} are desirable for tuning effects. Gate control of carrier densities at the high end of this range is at or near the limit of what has been demonstrated in literature for transistor style devices. Combined with the fact that we are exploiting the optical properties of the device layers, rather than electrical, we are entering into interesting territory that has not been significantly explored to date.

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TYPE SAND Report YEAR 2010
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Results 351–375 of 419
Results 351–375 of 419