Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Publications
Test simulation of neutron damage to electronic components using accelerator facilities
Abstract not provided.
Using heavy ions to simulate displacement damage by neutron on microelectronic devices
Abstract not provided.
Mid-term progress report: CRP F11016
SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, CV measurements on devices used in the CRP, calculating damage and ionization profiles for modeling.
Characterization of Hamamatsu diodes TCAD modeling IBIC in undamaged Helsinki diodes
Abstract not provided.
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
Abstract not provided.
Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam
Abstract not provided.
Reverse Annealing Comparisons of PnP and Npn III-V HBTs under Ion Irradiation - Probing the Effects of Thermal and Current Injection Annealing
Abstract not provided.
Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in TaOx Memristors
Abstract not provided.
Radiation Effects Microscopy in Microelectronic devices Using a Heavy Ion Nuclear Microprob
Abstract not provided.
Results 101–110 of 110