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Ultra-fast diffractive optical micro-trap arrays for neutral atom quantum computing

Proceedings of SPIE - The International Society for Optical Engineering

Kemme, S.A.; Brady, G.R.; Ellis, A.R.; Wendt, J.R.; Peters, D.W.; Biedermann, Grant B.; Carter, T.R.; Samora, S.; Isaacs, J.A.; Ivanov, V.V.; Saffman, M.

We design and fabricate arrays of diffractive optical elements (DOEs) to realize neutral atom micro-traps for quantum computing. We initialize a single atom at each site of an array of optical tweezer traps for a customized spatial configuration. Each optical trapping volume is tailored to ensure only one or zero trapped atoms. Specifically designed DOEs can define an arbitrary optical trap array for initialization and improve collection efficiency in readout by introducing high-numerical aperture, low-profile optical elements into the vacuum environment. We will discuss design and fabrication details of ultra-fast collection DOEs integrated monolithically and coaxially with tailored DOEs that establish an optical array of micro-traps through far-field propagation. DOEs, as mode converters, modify the lateral field at the front focal plane of an optical assembly and transform it to the desired field pattern at the back focal plane of the optical assembly. We manipulate the light employing coherent or incoherent addition with judicious placement of phase and amplitude at the lens plane. This is realized through a series of patterning, etching, and depositing material on the lens substrate. The trap diameter, when this far-field propagation approach is employed, goes as 2.44λF/#, where the F/# is the focal length divided by the diameter of the lens aperture. The 8-level collection lens elements in this presentation are, to our knowledge, the fastest diffractive elements realized; ranging from F/1 down to F/0.025. © 2012 SPIE.

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TYPE Conference YEAR 2012
ScopusOSTI

Advanced atom chips with two metal layers

Blain, Matthew G.; Biedermann, Grant B.; Benito, Francisco M.; Stevens, James E.

A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

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TYPE SAND Report YEAR 2010
OSTIDOI
Results 51–66 of 66
Results 51–66 of 66