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Single-mode GaN nanowire lasers

Optics Express

Li, Qiming L.; Wright, Jeremy B.; Chow, Weng W.; Luk, Ting S.; Brener, Igal B.; Lester, Luke F.; Wang, George T.

We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.

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Gallium nitride based logpile photonic crystals for visible lighting

Proceedings of SPIE - The International Society for Optical Engineering

Subramania, G.; Li, Q.; Lee, Y.J.; Figiel, J.J.; Sanchez, Carlos A.; Wang, George T.; Fischer, Arthur J.; Biswas, R.

Photonic crystals (PC) can fundamentally alter the emission behavior of light sources by suitably modifying the electromagnetic environment around them. Strong modulation of the photonic density of states especially by full threedimensional (3D) bandgap PCs, enables one to completely suppress emission in undesired wavelengths and directions while enhancing desired emission. This property of 3DPC to control spontaneous emission, opens up new regimes of light-matter interaction in particular, energy efficient and high brightness visible lighting. Therefore a 3DPC composed entirely of gallinum nitride (GaN), a key material used in visible light emitting diodes can dramatically impact solid state lighting. The following work demonstrates an all GaN logpile 3DPC with bandgap in the visible fabricated by a template directed epitaxial growth. © 2012 SPIE.

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Top-down fabrication of GaN-based nanorod LEDs and lasers

Proceedings of SPIE - The International Society for Optical Engineering

Wang, George T.; Li, Qiming L.; Wierer, Jonathan W.; Figiel, J.J.; Wright, Jeremy B.; Luk, Ting S.; Brener, Igal B.

Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

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Single-mode lasing from top-down fabricated gallium nitride nanowires

IEEE Photonic Society 24th Annual Meeting, PHO 2011

Wright, J.B.; Li, Q.M.; Luk, Ting S.; Brener, Igal B.; Wang, George T.; Westlake, K.R.; Lester, L.F.

We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm 2. © 2011 IEEE.

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Results 176–200 of 254
Results 176–200 of 254