This manual gives usage information for the Charon semiconductor device simulator. Charon was developed to meet the modeling needs of Sandia National Laboratories and to improve on the capabilities of the commercial TCAD simulators; in particular, the additional capabilities are running very large simulations on parallel computers and modeling displacement damage and other radiation effects in significant detail. The parallel capabilities are based around the MPI interface which allows the code to be ported to a large number of parallel systems, including linux clusters and proprietary “big iron” systems found at the national laboratories and in large industrial settings.
We present a comprehensive physics investigation of electrothermal effects in III-V heterojunction bipolar transistors (HBTs) via extensive Technology Computer Aided Design (TCAD) simulation and modeling. We show for the first time that the negative differential resistances of the common-emitter output responses in InGaP/GaAs HBTs are caused not only by the well-known carrier mobility reduction, but more importantly also by the increased base-To-emitter hole back injection, as the device temperature increases from self-heating. Both self-heating and impact ionization can cause fly-backs in the output responses under constant base-emitter voltages. We find that the fly-back behavior is due to competing processes of carrier recombination and self-heating or impact ionization induced carrier generation. These findings will allow us to understand and potentially improve the safe operating areas and circuit compact models of InGaP/GaAs HBTs.
The solution of the governing steady transport equations for momentum, heat and mass transfer in fluids undergoing non-equilibrium chemical reactions can be extremely challenging. The difficulties arise from both the complexity of the nonlinear solution behavior as well as the nonlinear, coupled, non-symmetric nature of the system of algebraic equations that results from spatial discretization of the PDEs. In this paper, we briefly review progress on developing a stabilized finite element (FE) capability for numerical solution of these challenging problems. The discussion considers the stabilized FE formulation for the low Mach number Navier-Stokes equations with heat and mass transport with non-equilibrium chemical reactions, and the solution methods necessary for detailed analysis of these complex systems. The solution algorithms include robust nonlinear and linear solution schemes, parameter continuation methods, and linear stability analysis techniques. Our discussion considers computational efficiency, scalability, and some implementation issues of the solution methods. Computational results are presented for a CFD benchmark problem as well as for a number of large-scale, 2D and 3D, engineering transport/reaction applications.
The solution of the governing steady transport equations for momentum, heat and mass transfer in fluids undergoing non-equilibrium chemical reactions can be extremely challenging. The difficulties arise from both the complexity of the nonlinear solution behavior as well as the nonlinear, coupled, non-symmetric nature of the system of algebraic equations that results from spatial discretization of the PDEs. In this paper, we briefly review progress on developing a stabilized finite element ( FE) capability for numerical solution of these challenging problems. The discussion considers the stabilized FE formulation for the low Mach number Navier-Stokes equations with heat and mass transport with non-equilibrium chemical reactions, and the solution methods necessary for detailed analysis of these complex systems. The solution algorithms include robust nonlinear and linear solution schemes, parameter continuation methods, and linear stability analysis techniques. Our discussion considers computational efficiency, scalability, and some implementation issues of the solution methods. Computational results are presented for a CFD benchmark problem as well as for a number of large-scale, 2D and 3D, engineering transport/reaction applications.